Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
VDS=650V: Suitable for three-phase 380V input and high-voltage DC bus systems, provides ample voltage margin, enhances avalanche and surge withstand capability.
VGS=±30V: Wide gate drive window, compatible with various PWM controllers and driver chips, reduces false turn-on risk.
Vth=3.5V (Typical): Moderate threshold voltage, strong noise immunity, suitable for high-voltage hard-switching and half-bridge/full-bridge topologies.
RDS(on)=160mΩ @ VGS=10V: Super Junction technology significantly reduces high-voltage conduction loss, improves heavy-load efficiency, simplifies thermal design.
ID=20A: Ample continuous current capability, can cover the primary switch requirements of 300W~1kW switching power supplies.
Package DFN8X8: Low parasitic inductance and low thermal resistance, supports high-frequency switching, saves PCB area, improves system power density.
Domain and module applications：
Switching Power Supplies (SMPS): High-frequency and high-efficiency characteristics suitable for main switches in LLC, flyback, and dual-switch forward topologies, reducing conduction and switching losses.
PFC Power Factor Correction: The superjunction structure maintains low losses even under large current ripple, improving overall efficiency and power density.
Photovoltaic Inverters: 650V voltage withstand matches the bus voltage of distributed photovoltaic systems, and 20A current capability meets string-level power conversion needs.
High-Voltage DC-DC Converters: Low on-resistance improves conversion efficiency, and a wide gate voltage range simplifies driver circuit design, suitable for communication power supplies and charging station auxiliary power supplies.
Motor Drive Inverters: Suitable for industrial inverters and servo drives, high surge capability ensures reliability under motor start/stop and locked-rotor conditions.
Server and Data Center Power Supplies: The DFN8X8 miniaturized package combined with high efficiency helps improve the power density of 1U power modules.
Charging Stations and Vehicle Power Supplies: Voltage margin and high current capability handle wide input voltage fluctuations, meeting automotive-grade thermal cycle requirements.
Selection Summary: The SIHH125N60EF-T1GE3-VB, with its advanced superjunction technology, achieves a unification of high voltage, low resistance, and compact packaging. It is a cost-effective power MOS solution for 650V-class switching power supplies, inverters, and PFC applications, particularly suitable for projects with strict requirements on efficiency, temperature rise, and system size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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