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SIHH105N60EF-T1GE3-VB Product details

Product introduction:

SIHH105N60EF-T1GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. The SJ_Multi-EPI technology balances low conduction loss with high reliability, and the DFN8X8 package strikes a balance between heat dissipation capability and power density. The combination of 650V withstand voltage, 20A current carrying capacity, and 160mΩ on-resistance makes it an ideal cost-reduction upgrade option to replace traditional TO-220 or D2PAK packaged devices, especially suitable for high-power-density, high-reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8X8 Single-N 650V 3.5V 20A 160(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8X8 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8X8 Single-N


VDS=650V: Suitable for three-phase industrial power and high-voltage bus systems, provides ample voltage spike margin, reduces avalanche breakdown risk.
VGS=±30V: Compatible with 10V~15V gate drive levels, can directly connect to dedicated driver ICs or isolated drivers, simplifying gate circuit design.
Vth=3.5V (Typical): Higher threshold voltage, strong dv/dt noise immunity, suitable for high-voltage switching applications in noisy environments.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance, significantly reduces full-load temperature rise, can reduce heatsink size or copper area.
ID=20A: Ample continuous current margin, can handle peak demands of most high-voltage power supplies and motor drive scenarios.
Package DFN8X8: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area and improves assembly efficiency.

Domain and module applications:



High-Voltage DC-DC Converters: Low conduction losses improve conversion efficiency, DFN8X8 small package facilitates module miniaturization.
Server/Communication Power Supplies: 650V withstand voltage suitable for PFC and LLC topologies, increasing power density and system reliability.
Photovoltaic Inverters: SJ_Multi-EPI technology provides low switching losses, supporting higher switching frequencies and reducing filter component costs.
Industrial Motor Drives: High surge capability and wide safe operating area adapt to frequent start/stop and overload conditions, significantly reducing controller temperature rise.
Electric Vehicle Auxiliary Power Supplies: Direct drive from high-voltage bus, ample voltage margin, wide operating temperature range suitable for vehicle environments.
LED Lighting Drives: Replaces traditional through-hole MOSFETs in high-voltage constant current topologies, reducing conduction voltage drop and improving overall lamp efficiency.
UPS Uninterruptible Power Supplies: Fast switching characteristics reduce inverter stage losses, enhance load capacity, and improve overall efficiency.

Selection Summary: The SIHH105N60EF-T1GE3-VB achieves an excellent balance between voltage rating, on-resistance, and package form factor. It is a cost-effective general-purpose choice for 650V high-voltage switching applications, particularly suitable for projects with strict requirements on power density, heat dissipation, and system size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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