Product introduction：
SIHH26N60EF-T1-GE3-VB is a high-voltage, high-current N-channel power MOSFET, packaged in a compact DFN8X8, with 650V withstand voltage and 20A current carrying capacity. Based on SJ_Multi-EPI super-junction technology, the on-resistance is as low as 160mΩ, balancing switching loss and conduction loss, suitable for efficient high-voltage applications. The gate drive range is wide up to ±30V, adaptable to various drive circuits, offering high reliability and superior thermal performance.
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Domain and module applications：
Switching Power Supplies → High-voltage bus switch, high efficiency, low temperature rise
LED Lighting Drives → High-voltage constant current control, stable and reliable
Electric Vehicle Chargers → High-voltage rectification, low losses, strong impact resistance
Photovoltaic Inverters → DC-AC conversion, ample voltage margin
Industrial Auxiliary Power Supplies → Wide voltage input, adaptable to harsh environments
PFC Power Factor Correction → Low conduction losses, improving overall efficiency
Motor Drive Control → High-voltage bus switch, fast response, safe and reliable
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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