Product introduction：
Are you designing a high-power-density industrial power supply or a new energy vehicle charging module, facing a 650V high-voltage bus, but struggling with high switching transistor losses and difficult heat dissipation? Ordinary high-voltage MOS either has high on-resistance or a large package. VBsemi SIHH250N60EF-T1GE3-VB is designed for this—it is based on advanced multi-epitaxial super-junction (SJ_Multi-EPI) technology, integrating 650V withstand voltage, 20A current carrying capacity, and 160mΩ on-resistance into a compact DFN8X8 package, allowing high-voltage, high-power designs to balance efficiency and space.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
- Voltage Rating 650V, easily handles high-voltage bus and surge transients
- Gate Drive Range ±30V, compatible with multiple drive circuits, enhanced robustness
- Threshold Voltage 3.5V, provides clear on/off criterion, good noise immunity
- On-Resistance 160mΩ (at 10V drive), maintains low loss at high voltage
- Maximum Current 20A, suitable for medium-power switching applications
- Uses SJ_Multi-EPI technology, better figure of merit (FOM), faster switching speed
Domain and module applications：
- Switching Power Supplies / Server Power Supplies – Acts as a high-voltage power switch, effectively reducing conduction losses and improving overall efficiency.
- Photovoltaic Inverters / Energy Storage Systems – Achieves efficient power conversion on the DC bus side, facilitating clean energy grid connection.
- Electric Vehicle On-Board Chargers (OBC) – Withstands high-voltage bus fluctuations, providing a stable and efficient charging path for the battery pack.
- Industrial Motor Drives – Utilizes low on-resistance and fast switching characteristics to reduce driver temperature rise and improve reliability.
- Power Factor Correction (PFC) Circuits – Maintains low losses in continuous conduction mode, improving power factor and harmonic performance.
- High-Voltage DC-DC Converters – Suitable for boost, buck, and forward/flyback topologies, replacing traditional high-voltage MOS for higher efficiency.
- Charging Stations / Communication Power Supplies – Handles wide input voltage ranges, providing a solid and reliable power switch guarantee for high-voltage systems. In a nutshell: The SIHH250N60EF-T1GE3-VB is not an ordinary superjunction MOSFET; it is the "efficiency engine" and "space optimizer" for your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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