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SIHH21N65E-T1-GE3-VB Product details

Product introduction:

SIHH21N65E-T1-GE3-VB is a Single N-MOS optimized for high-voltage power switching scenarios, using SJ_Multi-EPI super junction technology to balance low conduction loss and high reliability. The DFN8X8 package achieves a good balance between heat dissipation capability and power density. The combination of 650V voltage rating, 20A current capability, and 160mΩ on-resistance makes it an ideal power switch option for high-voltage power supplies, industrial control, and new energy applications, especially suitable for system designs with strict requirements on efficiency and temperature rise.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8X8 Single-N 650V 3.5V 20A 160(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8X8 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8X8 Single-N

VDS=650V: Suitable for high-voltage bus systems such as three-phase rectification, photovoltaic inverters, and charging stations, providing sufficient voltage spike margin and enhancing system avalanche capability.
VGS=±30V: Wide gate drive range, compatible with various PWM controllers and driver ICs, reducing drive circuit design complexity.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring stable switching characteristics under high voltage.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super junction technology, significantly reducing full-load losses and enabling smaller heatsinks.
ID=20A: Ample continuous current margin, capable of handling transient peak demands such as motor startup and capacitor charging.
Package DFN8X8: Low parasitic inductance and thermal resistance, supports high-frequency switching, suitable for compact high-current PCB layouts.

Domain and module applications:


High-Voltage DC-DC Converters: Low conduction losses improve conversion efficiency; Super Junction structure reduces switching losses, suitable for telecom and server power supplies.
Photovoltaic Inverters: 650V voltage tolerance covers common bus voltages; low on-resistance reduces power tube temperature rise, improving overall system reliability.
Energy Storage and Charging Piles: High current capability meets charge/discharge loop requirements; avalanche ruggedness enhances system robustness under harsh conditions.
Industrial Motor Drives: High voltage margin handles bus surges; excellent PWM switching characteristics aid in drive miniaturization and efficiency improvement.
UPS Uninterruptible Power Supplies: Fast switching and low loss characteristics suit high-frequency design, increasing power density and reducing cooling costs.
Auxiliary Power Supplies and High-Voltage Start-Stop Circuits: Sufficient voltage margin, wide operating temperature range suitable for industrial environments, ensuring long-term stable operation. Selection Summary: The SIHH21N65E-T1-GE3-VB achieves a balance between high voltage tolerance, current carrying capability, on-resistance, and package thermal performance. It is a cost-effective general-purpose choice for 650V high-voltage power switching applications, particularly suitable for projects with strict requirements on efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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