Product introduction：
Still troubled by high switching losses, difficult heat dissipation, and insufficient reliability in high-voltage power supply solutions? Let VBsemi SIHH150N60E-T1-GE3-VB solve your worries! This N-MOS transistor in a DFN8X8 package, using advanced SJ_Multi-EPI super-junction technology, has a breakdown voltage of up to 650V while still carrying 20A continuous current, with an on-resistance as low as 160mΩ, achieving lower temperature rise and higher efficiency in high-voltage, high-power scenarios. With its excellent high-voltage switching characteristics and compact 8×8mm package, it is an ideal choice for high-voltage applications such as server power supplies, photovoltaic inverters, and charging stations, making it a "performance tool" for high-voltage power engineers.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
Voltage Rating: 650V (Handles high-voltage systems with ease, ample margin)
Drive Range: ±30V (Compatible with various gate drive circuits, strong anti-interference capability)
Threshold Voltage: 3.5V (Reliable turn-on with standard logic levels)
On-Resistance: 160mΩ @ 10V (Super junction technology, significantly reduced conduction loss)
High Current Capability: 20A (Stable output under high voltage, high power density)
Package: DFN8X8 (Low thermal resistance, suitable for high-density power layout)
Technology: SJ_Multi-EPI (Multi-Epitaxial Super Junction, fast switching speed, low loss)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: AC-DC rectification, PFC boost, 650V withstand voltage handles wide voltage input, significantly improving efficiency
Photovoltaic Inverters: MPPT circuits and DC-AC conversion, ultra-low internal resistance reduces energy loss, increasing power generation revenue
Charging Piles and On-Board Charging: High-voltage and high-current conversion, DFN8X8 package balances heat dissipation and compact design
Industrial Motor Drives: High-voltage frequency converters, servo drives, reliable switching characteristics ensure smooth motor operation
High-Voltage DC-DC Converters: Suitable for communication base stations, energy storage systems, enabling efficient module miniaturization
LED High-Power Lighting: High-voltage constant current drive, strong current carrying capacity, stable brightness, longer lifespan. SIHH150N60E-T1-GE3-VB – High-voltage super junction, low resistance, high efficiency, making your power supply design more composed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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