Product introduction：
SIHH14N65EF-T1-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. The SJ_Multi-EPI technology balances low conduction losses with high reliability, and the DFN8X8 package strikes a balance between heat dissipation capability and power density. The combination of 650V withstand voltage, 20A current carrying capacity, and 160mΩ on-resistance makes it a preferred device for applications such as industrial power supplies, photovoltaic inverters, and high-voltage auxiliary power supplies, especially suitable for system designs with strict requirements on temperature rise and board space.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
VDS=650V: Covers three-phase rectification, PFC boost, and high-voltage bus scenarios, providing sufficient voltage spike margin to reduce system failure risk.
VGS=±30V: Large gate drive margin, compatible with various PWM controllers and driver ICs, simplifying external clamping protection circuits.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, can be reliably turned on by standard 12V~15V gate drive.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance, significantly reduces conduction loss under high voltage and high current, improving overall system efficiency.
ID=20A: Ample continuous current margin to handle transient overloads such as motor startup and capacitor charging.
Package DFN8X8: Low parasitic inductance and thermal resistance, supports high-frequency switching, and improves PCB thermal layout.
Domain and module applications：
Switching Power Supplies and PFC Circuits: High-voltage withstand and low conduction losses match 400V bus applications, improving AC-DC conversion efficiency.
Photovoltaic Inverters: SJ_Multi-EPI technology reduces switching losses, suitable for Boost stages and H-bridge inverters, aiding component-level power optimization.
High-Voltage Motor Drives: 650V withstand voltage meets three-phase 380V system requirements, low internal resistance reduces driver heat generation, improving operational stability.
Industrial Auxiliary Power Supplies: Wide safe operating area combined with DFN8X8 package, suitable for miniaturized module power supplies and auxiliary power solutions.
High-Voltage DC-DC Converters: Can replace traditional high-voltage MOS in synchronous rectification or active clamp topologies, improving light-load and heavy-load efficiency.
Charging Piles and Energy Storage Equipment: High-reliability avalanche capability and ample current margin, suitable for frequent start-stop and harsh grid environments. Selection Summary: The SIHH14N65EF-T1-GE3-VB achieves a balance between high-voltage withstand, conduction losses, and package thermal performance. It is a cost-effective general-purpose choice for 650V high-voltage switching applications, especially suitable for industrial and new energy projects with strict requirements for efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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