Product introduction：
Still troubled by losses and heat dissipation in high-voltage switching power supplies? Let VBsemi SIHH125N65E-T1-GE3-VB solve your worries! This N-MOS transistor in a DFN8X8 package, using SJ_Multi-EPI super-junction technology, features a 650V withstand voltage and 20A high current capability, with an on-resistance as low as 160mΩ, delivering excellent switching and conduction loss performance. Compared to ordinary planar technology, it maintains low on-resistance and fast switching characteristics even at high voltages, making it a "reliable tool" for high-voltage, high-efficiency conversion.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
Voltage Rating: 650V (Sufficient margin for high-voltage applications)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, precise control)
Ultra-Low On-Resistance: 160mΩ @ 10V (Very low conduction loss at high voltage)
High Current Capability: 20A (DFN8X8 package handles high power density)
Technology Architecture: SJ_Multi-EPI (Super Junction Multi-Epitaxial, significantly improved figure of merit)
Package: DFN8X8 (Low thermal resistance, small size, suitable for high-density power design)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: LLC half-bridge, full-bridge topologies, high efficiency, low temperature rise
PFC Power Factor Correction: High-voltage rectification stage, reduces conduction losses, improves energy efficiency
Electric Vehicle Chargers: High-voltage DC-DC conversion, stable and reliable, strong impact resistance
Photovoltaic Inverters: MPPT and inverter stage power switches, better conversion efficiency
Industrial Motor Drives: High-voltage bus power supply, fast switching speed, smooth drive
High-Voltage Auxiliary Power Supplies: UPS, server power supplies, enabling miniaturized and high-efficiency designs. SIHH125N65E-T1-GE3-VB – High voltage, low resistance, robust and reliable, making your power supply design a step ahead!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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