Are you designing a high-power-density server power supply or an industrial inverter, facing a 650V high-voltage bus while needing to handle a 20A high current output? Traditional high-voltage MOS tubes either have high conduction loss that runs hot or large packages that take up valuable space. VBsemi SIHH068N60E-T1-GE3-VB is designed for this—based on SJ_Multi-EPI super-junction technology, it achieves 650V withstand voltage, 20A continuous current, and an on-resistance of only 160mΩ in a compact DFN8X8 package, allowing high-voltage, high-efficiency design without compromise.
- Voltage Rating 650V, easily handles high-voltage bus fluctuations, ample safety margin - Gate Drive Range ±30V, compatible with common drive schemes, strong noise immunity - Threshold Voltage 3.5V, more reliable with standard level drive - On-Resistance 160mΩ (at 10V drive), maintains low loss even at high voltage - Maximum Current 20A, suitable for medium-to-high power switching power supplies and inverter applications - Package DFN8X8, balances thermal performance and mounting area - Technology SJ_Multi-EPI Super Junction, significantly reduces conduction and switching losses
Domain and module applications：
- Switching Power Supplies (SMPS) – As a high-voltage main switch, effectively reduces conduction loss, improves overall efficiency, and reduces heatsink size. - Server/Telecom Power Supplies – Operates stably in 650V bus scenarios, meeting high efficiency and high reliability requirements. - Photovoltaic Inverters/Energy Storage Converters – Utilizes low on-resistance and fast switching characteristics to reduce energy loss and increase power generation revenue. - Industrial Motor Drives – Withstands high voltage surges and frequent switching, providing smooth power control for motors. - Electric Vehicle On-Board Chargers (OBC) and DC-DC Converters – Maintains stable performance under harsh temperature and electrical stress, contributing to vehicle lightweighting. - Power Factor Correction (PFC) Circuits – Reduces high-voltage rectification loss, improves power factor and overall system efficiency. One-sentence summary: The SIHH068N60E-T1-GE3-VB is not an ordinary MOS tube; it is the "balance master" and "reliable cornerstone" of efficiency and power density in your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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