Product introduction:
XPH4R714MC,L1XHQ-VB is a Single P-MOS optimized for low-voltage high-power switching scenarios. The Trench process balances extremely low conduction loss and high switching reliability, and the DFN8(5X6) package achieves an excellent balance between heat dissipation and board space. The combination of 40V withstand voltage, 150A current capacity, and 3mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current, high-reliability applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
|
3(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
VDS=-40V: Suitable for 12V/24V/36V systems, providing sufficient negative voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with wide-range logic level drive, can directly connect to controller/driver IC, simplifying gate drive design.
Vth=-2V (Typical): Low threshold voltage design allows full conduction at lower gate drive voltages, suitable for battery-powered and low-voltage control scenarios.
RDS(on)=3mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load conduction loss, significantly reduces system temperature rise, can reduce heat sink size.
ID=-150A: Extremely strong continuous current capability, can handle demanding requirements of high-power motors, battery circuits, and high surge loads.
Package DFN8(5X6): Low parasitic inductance and thermal resistance, supports high current density and efficient heat dissipation, saves PCB space, suitable for compact power modules.
Domain and module applications:
High-Power Battery Protection Board: Extremely low internal resistance reduces self-heating of the protection circuit, 150A high current margin meets energy storage and power battery pack requirements.
BLDC Motor Drive: P-MOS high-side drive simplifies the circuit, 3mΩ on-resistance reduces PWM loss, significantly lowers motor controller temperature rise.
Automotive Power System: 40V voltage margin adapts to 12V/24V automotive bus, DFN8 package facilitates compact DCDC and body control module design.
Power Tools and Garden Machinery: High current carrying capacity supports stall and peak loads, Trench process ensures reliability under high-frequency switching.
Power Path Management: Suitable for load switches requiring negative voltage and high current switching in notebooks, servers, etc., low voltage drop improves system efficiency.
DC-DC Synchronous Rectification: Replaces Schottky diodes, significantly improves heavy-load efficiency, helps maximize power module power density.
Industrial PLC and Automation Equipment: Wide SOA and low thermal resistance ensure stability under long-term full-load operation, reducing maintenance costs. Selection Summary: XPH4R714MC,L1XHQ-VB achieves an excellent balance between extremely low on-resistance, ultra-high current capability, and compact package, making it a high-performance general-purpose choice for 40V low-voltage high-power P-MOS applications, especially suitable for projects with strict requirements on current carrying capacity, heat dissipation efficiency, and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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