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NTMFS003P03P8ZT1G-VB Product details

Product introduction:

NTMFS003P03P8ZT1G-VB is a Single P-MOS deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching loss and high reliability, and the DFN8(5X6) package achieves an excellent balance between heat dissipation performance and footprint. The combination of 30V withstand voltage, 120A current carrying capacity, and 2.2mΩ on-resistance makes it an ideal choice for high-current low-voltage switching applications, especially suitable for high-density, high-power PCB designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -1.68 -120A 2.2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -1.68 -120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -1.68 -120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P

VDS=-30V: Suitable for -5V/-12V/-24V systems, providing ample margin for negative voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with wide-range logic level drive, can be directly connected to controllers/PWM driver ICs, simplifying gate drive design.
Vth=-1.68V (Typical): Can enter the fully enhanced region even with low-voltage drive, suitable for stable operation under battery voltage decay scenarios.
RDS(on)=2.2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under high current full load, can reduce thermal copper area, improving system efficiency.
ID=-120A: Ample continuous current margin, can handle high current surge scenarios such as motor startup and power supply hot-swap.
Package DFN8(5X6): Low parasitic inductance and thermal resistance, supports high-frequency switching, saves PCB area and improves heat dissipation path.

Domain and module applications:


High-Current Power Switch: Ultra-low on-resistance significantly reduces conduction losses, suitable for hot-swap and load switches in server power supplies and communication equipment.
Battery Protection Module: Milliohm-level on-resistance reduces self-heating of the protection board, and fast turn-off characteristics ensure reliable protection during overcurrent/short circuit.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise, suitable for power tools and vehicle motors.
Power DC-DC Converter: Replaces traditional P-MOS in synchronous rectification or load switches, improving heavy-load efficiency and facilitating module miniaturization.
Automotive Electronic Systems: Voltage margin and wide operating temperature range adapt to 12V/24V vehicle buses, high reliability, suitable for body control and power management.
Portable Device Power Management: Low on-resistance improves charge/discharge efficiency, extends battery life, DFN8 small package aids high-density design. Selection Summary: NTMFS003P03P8ZT1G-VB achieves an excellent balance between extremely low on-resistance, high current capability, and compact packaging, making it a cost-effective universal choice for 30V low-voltage high-current P-MOS switch applications, especially suitable for projects with strict requirements on efficiency, heat dissipation, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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