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MSJAC11N50B-TP-VB Product details

Product introduction:

You are designing a high-voltage, high-reliability power system. Facing a 650V bus voltage and limited PCB area, ordinary MOS tubes often struggle to balance withstand voltage and loss. VBsemi MSJAC11N50B-TP-VB provides an elegant solution—based on SJ_Multi-EPI superjunction technology, it integrates 650V withstand voltage, 5A continuous current capability, and a low on-resistance of 1000mΩ into the compact DFN8(5X6) package, allowing high-voltage switch designs to no longer worry about heat dissipation and space simultaneously.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 650V 3.5V 5A 1000(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
- Drain-Source Withstand Voltage 650V, sufficient to cover high voltage scenarios such as three-phase rectification, industrial power supplies, and photovoltaic inverters, leaving ample safety margin
- Gate Drive Range ±30V, compatible with common PWM drivers and high-voltage gate driver ICs
- Threshold Voltage 3.5V, good noise immunity, clear and reliable switching characteristics
- On-Resistance 1000mΩ (at 10V drive), combined with super junction structure, effectively reducing conduction loss
- Maximum Current 5A, achieving a balance between power density and thermal performance within the DFN8(5X6) package
- Adopting SJ_Multi-EPI multi-layer epitaxial super junction technology, the figure of merit for withstand voltage and on-resistance is significantly better than traditional planar technology

Domain and module applications:


- Switching Power Supplies / Adapters – Acts as a high-voltage main switch, utilizing low loss and fast switching characteristics to improve overall efficiency and reduce temperature rise.
- Industrial Control Auxiliary Power Supplies – Operates stably over a wide input voltage range, providing reliable power for control circuits.
- Photovoltaic Microinverters / Optimizers – Handles high-frequency DC-DC or DC-AC power conversion, matching high bus voltage systems.
- LED Driver Power Supplies (High Voltage) – Enables constant current or dimming control, balancing high efficiency with good EMI performance.
- Charging Station Auxiliary Power Modules – Withstands harsh grid fluctuations and surge impacts, ensuring long-term stable system operation.
- High-Voltage Battery Management Systems (BMS) – Used for on/off control of battery pack charge/discharge circuits, improving safety and reliability.
- Motor Drives / Industrial Inverters – Performs power stage switching on the high-voltage bus side, aiding miniaturization and high power density design. One-sentence summary: MSJAC11N50B-TP-VB is not an ordinary MOS tube; it is your 'super-junction sharp tool' and 'reliable cornerstone' balancing withstand voltage, efficiency, and space in high-voltage power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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