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NVMFS5C646NLWFET1G-VB Product details

Product introduction:

NVMFS5C646NLWFET1G-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching scenarios. Using Trench technology, it combines extremely low on-resistance with excellent switching characteristics. The DFN8(5X6) package achieves an ideal balance between heat dissipation capability and board area. The combination of 60V withstand voltage, 100A current-carrying capacity, and an ultra-low on-resistance of 3mΩ makes it a high-performance preferred device for high-power-density power conversion, motor drives, and battery protection applications, especially suitable for system designs with strict requirements on temperature rise and efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 60V 3V 100A 5(mΩ) 3(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 60V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 60V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N


VDS=60V: Suitable for 12V/24V/48V systems, providing ample voltage margin, effectively withstanding switching spikes and avalanche impacts, improving system reliability.
VGS=±20V: Wide gate drive window, compatible with various logic levels and driver ICs, simplifying drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, balancing noise immunity and drive compatibility, ensuring stable operation in harsh electromagnetic environments.
RDS(on)=3mΩ @ VGS=10V; 5mΩ @ VGS=4.5V: Ultra-low on-resistance, significantly reducing full-load conduction losses, especially suitable for high-current continuous output scenarios, reducing heat dissipation requirements.
ID=100A: Extremely strong continuous current capability, easily handling high-power load surges and peak demands with ample margin.
Package DFN8(5X6): Bottom exposed pad design enhances thermal conduction efficiency, low parasitic inductance supports high-frequency switching, while saving PCB area, suitable for compact power modules.

Domain and module applications:


DC-DC Converters: Replaces traditional MOSFETs in synchronous rectification applications. Ultra-low on-resistance significantly improves heavy-load efficiency, lowers module temperature rise, and increases power density.
Motor Drive Control: Low PWM switching losses, high current carrying capacity, suitable for high-current motor drive scenarios like power tools, drones, and robots, ensuring smoother operation.
Battery Protection & BMS: 60V withstand voltage combined with 100A high current capability meets the needs of multi-cell lithium battery and energy storage system protection boards. Low resistance reduces system self-heating.
Automotive Power Systems: Wide withstand voltage range and low conduction losses adapt to 12V/24V automotive buses, suitable for high-power switches and pre-charge circuits in automotive electronics.
Power Adapters & Fast Charging: High efficiency and low loss characteristics improve AC-DC and DC-DC conversion efficiency, facilitating the miniaturization of 100W+ fast charging solutions.
Power OR-ing & Load Switches: Low voltage drop characteristics reduce voltage drop losses in redundant power supplies and hot-swap applications, improving overall system energy efficiency.
Industrial Control Modules: High reliability and strong heat dissipation capabilities meet the stringent requirements of 24V/48V industrial field equipment for power switches. Selection Summary: NVMFS5C646NLWFET1G-VB achieves an excellent balance between withstand voltage, current, on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 60V low-voltage high-power switching applications, especially suitable for projects with extreme requirements for efficiency, temperature rise, and power density.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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