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TPH1110ENH,L1Q-VB Product details

Product introduction:

TPH1110ENH,L1Q-VB is a Single N-MOS deeply optimized for medium-to-high voltage power switching scenarios. The Trench process balances low conduction loss with fast switching characteristics, and the DFN8(5X6) package achieves an ideal balance between thermal performance and footprint. The combination of 200V withstand voltage, 30A current carrying capacity, and 38mΩ on-resistance makes it an ideal choice for high-voltage topologies in communication power supplies, industrial control, and automotive electronics, especially suitable for applications with high power density and reliability requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 200V 3V 30A 38(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N

VDS=200V: Suitable for 48V/60V/72V systems and wide-range input buses, provides voltage spike margin, significantly reduces avalanche breakdown risk.
VGS=±20V: Compatible with standard gate drives and various PWM controllers, can be directly controlled by driver ICs or logic circuits, simplifying peripheral design.
Vth=3V (Typical): Moderate threshold voltage, ensures both anti-interference capability and sufficient turn-on under 10V drive, suitable for industrial drive conditions.
RDS(on)=38mΩ @ VGS=10V: Low on-resistance effectively reduces conduction loss, controllable full-load temperature rise, reduces heatsink or copper area requirements.
ID=30A: Ample continuous current margin, can handle peak current surges from motor startup, capacitor charging, etc., enhancing system robustness.
Package DFN8(5X6): Bottom thermal pad enhances heat dissipation, low parasitic inductance supports higher frequency switching, saves PCB area.

Domain and module applications:


DC-DC Converters: Suitable for high-voltage buck/boost topologies, low on-resistance improves heavy-load efficiency, DFN package facilitates compact module design.
Communication Base Station Power Supplies: 200V withstand voltage margin adapts to -48V bus and surge scenarios, 30A current capability meets high-power stage requirements.
Motor Drive Control: Low PWM switching losses, more reliable high-voltage bus drive, significantly reduced controller temperature rise.
Photovoltaic Inverter Auxiliary Power Supplies: Withstand voltage and current margin adapt to the wide voltage range of photovoltaic panels, improving system conversion efficiency and stability.
Electric Two-Wheeler/Low-Speed Vehicle Controllers: High-voltage, high-current carrying capacity combined with Trench technology meets frequent start/stop and climbing conditions.
Industrial Power Supplies and PFC Circuits: Low on-resistance and fast switching characteristics reduce losses in rectification/power factor correction stages, facilitating energy efficiency certification.
Battery Charging and Protection Modules: 200V withstand voltage adapts to multi-cell lithium battery series applications, low internal resistance reduces protection board self-heating, extending lifespan. Selection Summary: TPH1110ENH,L1Q-VB achieves a balance between voltage rating, current capability, on-resistance, and package thermal performance. It is a cost-effective general-purpose choice for 200V medium-to-high voltage switching applications, especially suitable for power supply and industrial projects with strict requirements for power density, temperature rise control, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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