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2SK1155-E-VB Product details

Product introduction:

2SK1155-E-VB is a high-voltage, low-loss N-Channel MOSFET in a TO220 package, with a 650V voltage rating and 4A current capability. Designed with Planar technology, it has an on-resistance of 2200mΩ, suitable for high-voltage switching and auxiliary power supply applications. The gate drive range is wide, up to ±30V, compatible with various drive circuits, offering high reliability and low temperature rise.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 4A 2200(mΩ) Planar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 4A Planar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 4A Planar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Voltage: 650V
Drive Voltage: ±30V
Threshold Voltage: 3.5V
On-Resistance (10V Drive): 2200mΩ
Max Current: 4A
Package: TO220
Technology: Planar

Domain and module applications:


Switching Power Supplies → High-voltage switch, stable and efficient
LED Driver Power Supplies → Sufficient voltage withstand, precise constant current
Chargers and Adapters → High-voltage rectification, low losses
Industrial Auxiliary Power Supplies → Surge-resistant, high reliability
High-Voltage DC-DC Converters → Wide input voltage withstand, large safety margin
Low-Power Inverters → Low switching losses, reduced thermal stress
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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