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BUK752R3-40E,127-VB Product details

Product introduction:

BUK752R3-40E,127-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching scenarios. The Trench technology achieves extremely low on-resistance while maintaining excellent switching characteristics. The TO220 package offers superior heat dissipation and overcurrent capability. The combination of 40V voltage rating, 180A continuous current, and 2mΩ on-resistance makes it a cost-effective core power device for applications such as low-voltage, high-current power paths, motor drives, and battery protection, especially suitable for industrial and automotive-grade solutions with stringent loss and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 3V 180A 15(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for switching spikes and load transients, enhancing system robustness.
VGS=±20V: Compatible with standard gate drives and 10V~12V logic levels, can be directly controlled by driver ICs or MCUs via drivers, simplifying peripheral design.
Vth=3V (Typical): Reasonable threshold voltage setting, effectively suppresses dv/dt induced turn-on, while ensuring full conduction under strong drive.
RDS(on)=2mΩ @ VGS=10V: Milliohm-level on-resistance, extremely low conduction loss, significantly reduced temperature rise at full load, allowing for smaller heatsinks.
RDS(on)=15mΩ @ VGS=4.5V: Maintains controllable conduction capability under low gate drive voltage conditions, meeting redundancy requirements for various drive scenarios.
ID=180A: Ample continuous current capability to handle high-power DC loads, motor stall conditions, and short-duration battery current surges.
Package TO220: Through-hole mounting facilitates thermal design, suitable for higher power PCB layouts, can be used with standalone heatsinks for high power density.

Domain and module applications:


High-Power DC-DC Converters: Replace multiple low-voltage MOSFETs in synchronous rectification or forward topologies, reducing conduction losses and improving heavy-load efficiency.
Battery Pack Charge/Discharge Management: Extremely low internal resistance reduces protection board heat generation; 180A high current supports high-rate charge/discharge, suitable for power tools and energy storage devices.
Low-Voltage High-Current Motor Drives: Low loss during PWM speed control, significantly reduced controller temperature rise; TO220 package facilitates power trace layout.
Automotive Power Systems: 40V withstand voltage covers 12V/24V automotive bus transients; wide safe operating area adapts to harsh conditions like starting and load transients.
Electric Forklift/AGV Drive Modules: High continuous current and low thermal resistance handle long-term high-load operation, improving system reliability and endurance.
High-Power Switching Power Supplies: Application in synchronous rectification stages reduces rectification losses, simplifies parallel current sharing design, and enhances power module power density.
UPS and Inverter Front-End: Ideal switch for low-voltage high-current paths, combining low conduction voltage drop and fast switching capability, enabling efficient energy conversion. Selection Summary: BUK752R3-40E,127-VB, with its 2mΩ ultra-low on-resistance, 180A high current capability, and TO220 robust heat dissipation package, is the preferred device for low-voltage high-power switching applications, especially suitable for power supply, motor, and automotive system projects with clear requirements for efficiency, temperature rise, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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