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SSM3K122TU,LF-VB Product details

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Product introduction：

The SSM3K122TU,LF-VB is a small-size, high-efficiency N-channel MOS transistor in an SC70-3 package, with a 20V drain-source voltage and 4A current capability. Trench technology ensures a low on-resistance of 36mΩ, resulting in low losses and fast response. It supports multiple drive voltages of 2.5V/4.5V/10V, making it suitable for low-voltage portable and modular power supply designs.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48(mΩ) 40(mΩ) 36(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
Voltage Rating: 20V
Drive Voltage: ±12V
Turn-On Threshold: 0.5~1.5V
On-Resistance (10V Drive): 36 mΩ
Maximum Current: 4A
Package: SC70-3
Technology: Trench

Domain and module applications：


Power banks and handheld devices → Boost/buck conversion, extends battery life
Battery charge/discharge protection → Precise cutoff, safe and reliable
Small fans, toy motors → Flexible drive, smooth startup
Smart switches, USB power control → Clean switching, low heat generation
LED lighting dimming → Stable brightness, energy efficient
DC-DC conversion modules → Synchronous rectification, better efficiency
Wearable devices and sensor power supply → Ultra-small package, saves space
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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