Product introduction：
The SIR5102DP-T1-BE3-VB is a Single N-MOS optimized for high-power, high-efficiency switching applications. It utilizes advanced SGT (Shielded Gate Trench) technology, combining ultra-low on-resistance with excellent switching performance. The DFN8(5X6) package achieves an excellent balance between thermal resistance and board space, making it particularly suitable for high-density power conversion and motor drive applications. The extreme combination of 100V withstand voltage, 180A continuous current capability, and a typical on-resistance of 3.45mΩ makes it a performance upgrade solution for replacing traditional TO-220 or DPAK packaged devices, especially suitable for systems with stringent requirements for power density and temperature rise control.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.5V |
180A |
|
|
3.45(mΩ) |
SGT |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.5V |
180A |
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.5V |
180A |
|
SGT |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
- **VDS=100V**: Suitable for 48V/60V/72V systems and various industrial bus voltages, leaving sufficient voltage spike margin, significantly improving system avalanche breakdown resistance.
- **VGS=±20V**: Compatible with 5V~12V logic level drives, can directly connect to PWM controllers/gate drive ICs, simplifying peripheral design and enhancing drive flexibility.
- **Vth=1.5V (Typical)**: Lower threshold voltage ensures full conduction under low-voltage drive, adapting to battery voltage fluctuations or wide input voltage scenarios.
- **RDS(on)=3.45mΩ @ VGS=10V**: Ultra-low on-resistance significantly reduces conduction loss, substantially lowers full-load temperature rise, can reduce heatsink size and PCB copper area.
- **ID=180A**: Continuous current capability is extremely ample, can cover surge impacts of high-voltage high-current loads such as high-power motors, energy storage, server power supplies.
- **Package DFN8(5X6)**: Low parasitic inductance, excellent heat dissipation path, supports high-frequency switching, saves PCB space, beneficial for power module miniaturization.
Domain and module applications：
- **Server/Telecom Power Supplies**: Replaces traditional high-voltage MOSFETs in synchronous rectification and primary side switching, improving heavy-load efficiency by 1~2%, combined with SGT technology to reduce switching losses, suitable for high power density power modules.
- **High-Power DC-DC Converters**: Ultra-low on-resistance reduces output stage losses, improving conversion efficiency; DFN package facilitates efficient heat dissipation, suitable for automotive OBCs, charger auxiliary power supplies, etc.
- **Motor Drives & BLDC Control**: 100V voltage rating covers 48V~72V motor buses; 180A high current can drive high-power brushless motors; excellent PWM switching characteristics significantly reduce controller temperature rise.
- **Energy Storage & Battery Protection**: High current carrying capacity and microsecond fast shutdown characteristics are suitable for energy storage converters and lithium battery protection boards; low Rds(on) reduces self-heating in protection circuits.
- **Power Tools & Garden Machinery**: High power density package combined with low on-resistance enables compact controller design, meeting the high-load, high-impact working conditions of power tools.
- **Automotive DC/DC & Low Voltage Distribution**: 100V voltage rating adapts to 12V/24V/48V vehicle buses; wide safe operating area enhances reliability, suitable for vehicle power supplies, smart distribution boxes, etc.
- **Industrial VFDs & Welding Equipment**: SGT technology significantly reduces the Miller plateau effect, enhancing dv/dt immunity, suitable for high-frequency, high-interference industrial environments.
Selection Summary: The SIR5102DP-T1-BE3-VB achieves a breakthrough balance between extremely high current capability, ultra-low on-resistance, and the compact DFN8(5X6) package. It is a high-performance core device for 100V-class high-power switching applications, especially suitable for power supplies, motor drives, and energy storage systems with ultimate requirements for efficiency, power density, and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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