Product introduction：
The TK56E12N1,S1X-VB is a high-power, low-loss N-channel MOSFET in a TO220 package, with a 120V voltage rating and a massive 108A current capacity. Based on advanced SGT technology, it achieves an ultra-low on-resistance of 6.6mΩ, ensuring strong current handling, low heat generation, and high efficiency. The gate drive is flexible with a wide ±20V range, compatible with various medium-voltage, high-current application scenarios.
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Domain and module applications：
Motor Drive & Control → High current output, fast response, low loss
DC-DC Power Conversion → Synchronous rectification, better efficiency
UPS Uninterruptible Power Supplies → High voltage tolerance, reliable power supply
Lithium Battery Charge/Discharge Protection → Safe shutdown, extends battery life
Inverters & Power Modules → High power handling, stable operation
Industrial Power Supplies & Auxiliary Power → Impact resistant, good temperature tolerance
Electric Vehicle Controllers → High current drive, easier heat dissipation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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