Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
30V |
|
0.8V |
0.95A |
250(mΩ) |
200(mΩ) |
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
30V |
|
0.8V |
0.95A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
30V |
|
0.8V |
0.95A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
- Voltage 30V, meets low-voltage system safety margin
- Gate drive range ±12V, compatible with 2.5V~4.5V logic levels
- Threshold voltage 0.8V, no pressure for low-voltage direct drive
- On-resistance 250mΩ (2.5V drive) / 200mΩ (4.5V drive), excellent loss control
- Maximum current 0.95A, dual-channel design saves PCB area
- Package SC70-6, extremely small size suitable for high-density integration
- Technology Trench, excellent switching performance
Domain and module applications：
Real-World Scenarios
- Smart Bracelet/Smart Watch – Used as a battery path switch, micro-amp standby current management, extending battery life.
- Portable Sensor Node – Dual channels independently control sensor power supply and signal acquisition, simplifying circuit design.
- Mobile Phone/Tablet Peripheral Circuit – Used for SD card slot, audio codec power switching, fast response, space-saving.
- Battery Protection Board – Dual MOS series structure, quickly disconnects during overcharge/overdischarge, protecting cell safety.
- Boost/Buck Converter – Replaces two discrete MOSFETs in synchronous rectification topology, improving conversion efficiency and reducing board area.
- LED Flashlight/Ambient Light – Low-voltage PWM dimming, good linearity, no flicker interference.
- IoT Module – Compatible with 3.3V/5V systems, directly driven by GPIO, no additional level shift circuit required.
One Sentence Summary: The PMGD175XNEX-VB is not a simple superposition of two ordinary MOS transistors; it is the 'dual-channel magician' and 'efficiency manager' for your low-voltage, micro-space power design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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