VBQH1330N is a single N-channel enhancement-mode MOSFET launched by VBsemi, packaged in SOT883B (DFN1006B-3). It features a 30V drain-source voltage rating, a continuous drain current of 1A, and a peak pulsed drain current up to 4.2A. The gate-source voltage withstand range is ±12V. Its typical on-resistance is 220mΩ under 4.5V gate drive, and only 245mΩ under low-voltage 2.5V gate drive, making it ideal for low-voltage control applications.
This device is equipped with 2kV HBM ESD protection, a maximum power dissipation of 0.7W, and an operating junction temperature range of -55°C to 150°C. The compact surface-mount package occupies minimal PCB space and delivers stable thermal performance. It is suitable for low-voltage switching circuits in a wide range of compact portable electronic devices.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT883B (DFN1006B-3) | Single-N | 30V | ±12V | 0.7V | 1.0A | 245 (mΩ) | 220 (mΩ) | Trench |
Model: VBQH1330N Brand: VBsemi Device Type: N-channel Enhancement-Mode MOSFET Package: SOT883B (DFN1006B-3) Configuration: Single N-channel VDS: 30V VGS: ±12V Vth: Temperature-dependent; typical value approx. 0.7V at 25°C RDS(ON) @ VGS=4.5V: 220 mΩ RDS(ON) @ VGS=2.5V: 245 mΩ Continuous Drain Current (ID): 1.0A Peak Pulsed Drain Current (IDM): 4.2A Total Power Dissipation (Ptot): 0.7W ESD Rating (HBM): 2kV Operating Junction Temperature (TJ): -55°C ~ 150°C Storage Temperature (Tstg): -55°C ~ 150°C Thermal Resistance RθJA: 175°C/W Wafer Technology: Trench
Load switches for portable devices; voltage-controlled small-signal switches
1.Power load switches for portable digital devices, used for on/off control of battery-powered circuits
2.Low-voltage signal path voltage control and small-signal switching
3.Power switching for miniature consumer electronics including TWS earbuds, smart bracelets, compact power banks, and Bluetooth modules
4.Power management switches for portable sensors and small wireless modules
5.Low-voltage DC low-current driving and signal switching control circuits
With its ultra-compact DFN1006B-3 package, superior low-voltage turn-on performance and robust ESD protection, the VBQH1330N perfectly meets the lightweight design requirements of compact portable equipment. Balancing low conduction loss and reliable operation, it serves as a cost-effective MOSFET solution for low-voltage, low-current switching applications. It fully satisfies the demand for long-term stable on/off control of power and signal circuits in consumer portable electronic products.
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