GaN landscape reshaping: VBsemi VBQE165A20S facilitates localized replacement an

time：2026-07-02

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Recently, the GaN (Gallium Nitride) power device industry has once again caught the prevailing wind.

Industry events surrounding GaN core patents have prompted power supply manufacturers to refocus on a practical issue: as high-frequency and high-efficiency power supplies rapidly upgrade, GaN device selection should not only consider parameters but also supply chain stability, sustainable product adoption capabilities, localized service capabilities, and long-term application risks.

For applications such as AI server power supplies, telecom power supplies, high-power fast charging, totem-pole PFC, high-frequency LLC, and ACF flyback, 650V enhancement-mode GaN has become an important device platform for improving efficiency, reducing size, and lowering losses. Against this backdrop, VBsemi's VBQE165A20S provides customers with a domestically produced GaN alternative for high-frequency, high-efficiency, and high-power-density designs.

Benchmarked Against Four Mainstream 650V GaN Models to Meet Localization Replacement Demands

The VBQE165A20S is positioned as a 650V enhancement-mode GaN power transistor, which can be used as a domestic alternative to many other 650V GaN devices of the same level. It is especially suitable for power platforms that require high efficiency, high switching speed, high power density and stable supply.

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After completing the verification of drive, electrical stress, thermal design, and PCB compatibility, the VBQE165A20S can be used as a key replacement for the following four models:

IGL65R140D2
IGL65R110D2
IGLD65R110D2
IGLD65R140D2

These models are all 650V enhancement-mode GaN power transistors, commonly used in industrial, telecommunications, data center SMPS, totem-pole PFC, high-frequency LLC, chargers, and adapters. The VBQE165A20S offers advantages over similar applications, including 650V withstand voltage, 20A continuous current, 30A pulse current, low on-resistance, nanosecond-level switching speed, zero reverse recovery, and built-in ESD protection. It provides customers with a more locally sourced and practically feasible alternative.

650V Enhanced GaN for High-Frequency Power Cores

The VBQE165A20S utilizes a 650V enhanced GaN technology platform, suitable for high-voltage bus and high-frequency power conversion applications. Compared to traditional silicon MOSFETs, GaN devices offer advantages such as faster switching speeds, lower switching losses, and zero reverse recovery, enabling power systems to upgrade towards higher frequencies, smaller sizes, and higher efficiency.

In totem-pole PFCs, high-frequency LLCs, server power supply front-ends, telecom power modules, high-power-density adapters, and fast-charging devices, the VBQE165A20S effectively reduces switching and recovery losses, improves overall efficiency, and facilitates the miniaturization of magnetic components and compact PCB layouts.

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Low On-Resistance, Reduced System Losses

Conduction loss is a key factor affecting power supply efficiency and temperature rise. The VBQE165A20S features a typical on-resistance of 0.110Ω, effectively reducing conduction loss in high-voltage, high-frequency, and high-power-density applications.

In continuous operation scenarios such as AI server power supplies and communication power supplies, lower conduction losses mean higher overall efficiency, lower thermal stress, and better reliability. For power modules with limited space and heat dissipation, the VBQE165A20S helps engineers achieve a better balance between efficiency, temperature rise, and power density.

20A continuous current, supporting higher power density

The VBQE165A20S features a continuous drain current of 20A and a pulse current capability of 30A, which can meet the current capability and transient power handling requirements of medium and high power power modules.

Compared to some comparable 650V GaN devices, the VBQE165A20S offers advantages in continuous current capability and power dissipation, making it more suitable for high-power-density power supply designs. Combined with its DFN 8×8 package, it can further reduce PCB footprint and improve system integration.

Nanosecond-level fast switching, unleashing the high-frequency advantages of GaN

One of the core values of GaN devices lies in their high-frequency switching capabilities. The VBQE165A20S features fast turn-on and turn-off characteristics, which can help reduce switching losses and improve dynamic response in the system.

In totem-pole PFC applications, fast switching helps improve power factor correction efficiency; in high-frequency LLCs, it helps optimize the resonant operating range and reduce the size of transformers and inductors; in ACF flyback and high-power adapters, it helps increase the operating frequency, reduce the overall size, and improve light-load efficiency.

Zero Reverse Recovery, Reduced Bridge Topology Losses

The VBQE165A20S features the typical zero reverse recovery characteristic of GaN devices. Since GaN devices lack the traditional PN junction diode structure, Qrr=0 can be achieved, effectively reducing reverse recovery losses in bridge topologies.

This characteristic is particularly important for totem-pole PFC, half-bridge LLC, synchronous rectification, and high-frequency DC/DC converters. Zero reverse recovery not only helps improve efficiency but also reduces switching transient current spikes, alleviates EMI debugging stress, and increases system design margin.

Built-in ESD Protection, Enhanced Application Reliability

High-frequency GaN devices have stringent requirements for drive, layout, and protection design. The VBQE165A20S features built-in ESD protection, helping to enhance device reliability during manufacturing, transportation, assembly, and system applications.

For customers switching from silicon MOSFETs or other GaN models to the VBQE165A20S, comprehensive verification is still required in conjunction with drive voltage, gate resistance, switching frequency, PCB parasitic parameters, thermal conditions, and EMI performance. VBsemi provides device selection, replacement evaluation, and engineering support for typical application scenarios to help customers shorten the implementation cycle.

Typical application directions

The VBQE165A20S can be widely used in:

AI server power supplies, telecom and communication power supplies, high-frequency switching power supplies (SMPS), totem-pole PFC, high-frequency LLC resonant converters, ACF flyback power supplies, high-power density adapters, fast battery charging equipment, and industrial high-efficiency power modules.

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With the continued growth of the AI computing power, electrification, energy storage, and high-efficiency power supply markets, power systems are moving from simply being "usable" to being "efficient, compact, reliable, and sustainably supplied." GaN devices are also expanding from the consumer fast-charging market to higher-value applications such as servers, telecommunications, industry, and energy.

VBsemi: Enabling Stable GaN Deployment for Customers with Localized GaN Solutions

The GaN industry is currently facing intensified competition, with patents, supply chains, and domestic substitution becoming key concerns for an increasing number of power supply manufacturers.

The launch of the VBQE165A20S not only enriches VBsemi's third-generation semiconductor power device product line but also provides customers with a more flexible, stable, and engineering-practical option on the 650V GaN platform.

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For replacement needs of similar 650V GaN devices such as the IGL65R140D2, IGL65R110D2, IGLD65R110D2, and IGLD65R140D2, the VBQE165A20S is a key evaluation model, helping customers achieve a better balance between performance, efficiency, size, supply chain security, and local technical support.

The VBQE165A20S is not just a new GaN product from VBsemi, but also a domestically developed alternative solution for the era of high-frequency, high-efficiency power supplies.

VBsemi makes 650V GaN power supply designs more efficient, more compact, and more reliable.

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We cordially invite you to visit the VBsemi booth to explore new opportunities in GaN high-efficiency power supplies.

Focusing on the development trends of power supplies with higher frequencies, higher efficiency, and higher power density, VBsemi will continue to advance its product portfolio of power devices such as MOSFETs, SiC, and GaN, providing more competitive power semiconductor solutions for applications including AI server power supplies, communication power supplies, industrial power supplies, fast charging adapters, and photovoltaic energy storage.

During Electronica China 2026 in Shanghai, VBsemi will showcase a variety of new power device products and application solutions. The exhibit will highlight product platforms including 650V GaN, SiC MOSFETs, and high-performance MOSFETs. We sincerely welcome customers, partners, and industry engineers to visit our booth for technical exchange and to explore efficient power design, domestic substitution options, and implementation strategies for third-generation semiconductor applications.

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