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VBTA4250N: The Superior Domestic Alternative to EM6J1T2R, Engineered for Enhanced Performance in Low-Voltage Switching Applications
time:2026-02-27
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In compact, low-voltage switching applications such as portable devices, load switches, power management modules, and battery protection circuits, ROHM's EM6J1T2R, with its dual P-channel configuration, high-speed switching capability, and ultra-low voltage drive (1.2V), has been a popular choice for space-constrained designs. However, in the current landscape of global component shortages and extended lead times, reliance on such imported parts presents challenges like procurement delays, cost volatility, and limited local technical support. This drives the urgent need for a reliable, high-performance domestic alternative that ensures supply chain stability without compromising on specifications.
VBsemi, leveraging its expertise in power semiconductor design, introduces the VBTA4250N, a dual P-channel MOSFET developed as a direct, pin-to-pin replacement for the EM6J1T2R. This component not only matches the original form factor and functionality but delivers significant parametric advancements, offering a more robust, efficient, and readily available solution for modern low-voltage applications.
Parametric Excellence and Performance Elevation
Tailored to supersede the EM6J1T2R, the VBTA4250N demonstrates marked improvements across key electrical characteristics, providing greater design headroom and reliability:
The continuous drain current is rated at -0.5A, a substantial 150% increase over the original -200mA rating. This enhanced current-handling capability supports more demanding load conditions and improves system robustness.
The on-state resistance is significantly reduced to 500mΩ (at both VGS= -2.5V and -4.5V), outperforming the EM6J1T2R's 1200mΩ. This 58% reduction in RDS(on) minimizes conduction losses, improves power efficiency, and reduces thermal dissipation in the application.
The device features a low gate threshold voltage (Vth) of -0.6V, ensuring compatibility with ultra-low voltage drive signals and enabling efficient operation in battery-powered scenarios. Coupled with a ±12V gate-source voltage rating, it offers strong immunity against gate noise and ESD events.
Advanced Trench Technology for Reliable High-Speed Switching
The EM6J1T2R is recognized for its high-speed switching performance. The VBTA4250N utilizes an advanced Trench process technology, which optimizes the trade-off between low on-resistance and switching characteristics. This results in fast switching transitions, reduced switching losses, and stable operation under high-frequency conditions. The integrated G-S protection diode is retained, safeguarding the device against voltage transients. Engineered for durability, the VBTA4250N operates reliably across an extended temperature range, making it suitable for consumer electronics, IoT devices, and other applications requiring long-term stability.
Seamless Drop-In Replacement with SC75-6 Package
A primary concern in component substitution is redesign effort. The VBTA4250N eliminates this hurdle through full mechanical and footprint compatibility. It is offered in the SC75-6 package, identical to the EMT6 package of the EM6J1T2R in pinout, dimensions, and pad layout. Engineers can replace the component directly on the existing PCB without any modifications to the board design, thermal layout, or assembly process. This "plug-and-play" compatibility drastically reduces qualification time, accelerates time-to-market, and avoids additional costs associated with re-design and re-testing.
Local Supply Chain Assurance and Expert Support
Choosing the VBTA4250N mitigates risks associated with international logistics and supply uncertainty. VBsemi's domestic manufacturing and streamlined logistics enable stable inventory and short lead times, often within weeks. Furthermore, customers benefit from responsive local technical support. VBsemi provides comprehensive documentation, including detailed cross-reference guides, application notes, and SPICE models, backed by a technical team ready to assist with integration challenges and optimize design performance.
From power switches and battery management in portable gadgets to interface control and signal switching in communication modules, the VBTA4250N stands out as the intelligent alternative to the EM6J1T2R. It combines superior electrical parameters, proven reliability, perfect package compatibility, and secure local supply—enabling designers to enhance product performance while strengthening their supply chain resilience. Adopting the VBTA4250N is a straightforward step toward achieving cost efficiency, design stability, and procurement peace of mind.
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