Breaking Through and Surpassing: How Domestic Dual N-Channel MOSFETs Achieve High-Performance Substitution for Renesas UPA1763G-E1-AT
Introduction
Dual N-channel MOSFETs are key components for efficient power management and switching in compact electronic designs. For years, international manufacturers like Renesas have set benchmarks with established parts such as the UPA1763G-E1-AT. However, supply chain uncertainties and the pursuit of technological independence have made finding reliable, high-performance domestic alternatives a strategic priority. Represented by VBsemi’s VBA3638, domestic solutions are now achieving direct competition and even surpassing such international classics.
Part 1: Analysis of the Classic Component
Renesas’ UPA1763G-E1-AT is a dual N-channel MOSFET (60V, 4.5A per channel) featuring a low on-resistance of 66mΩ at 4.0V gate drive. It is housed in a compact SOP8 package, making it suitable for space-constrained applications requiring dual switches, such as DC-DC converters, motor drives, load switching, and power management circuits. Its balance of voltage rating, current capability, and low RDS(on) has made it a popular choice in various medium-power designs.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi’s VBA3638 directly competes with the UPA1763G-E1-AT and demonstrates superior key parameters:
Higher Current Capability: Continuous drain current reaches 7A (a significant increase over 4.5A), enabling higher power handling and design margin.
Lower Conduction Losses: With an RDS(on) of only 28mΩ at 10V gate drive (and low resistance at 4.5V), it substantially reduces power loss and improves system efficiency.
Robust Voltage Ratings: Maintains 60V drain-source voltage and ±20V gate-source voltage, ensuring compatibility and reliability.
Full Pin-to-Pin Compatibility: Uses the same SOP8 package with Dual N+N configuration, allowing drop-in replacement without board re-layout.
The device leverages advanced Trench technology, offering optimized switching performance and thermal characteristics.
Part 3: Core Value Beyond Specifications
Selecting a domestic alternative like the VBA3638 delivers deeper strategic benefits:
Enhanced Supply Chain Resilience: Reduces dependency on single-source international suppliers, ensuring stable supply and production continuity.
Cost Optimization: Offers competitive pricing with superior performance, potentially lowering system cost and enabling simpler thermal design.
Access to Local Technical Support: Domestic suppliers provide faster response, application-specific guidance, and collaborative development.
Strengthening the Industrial Ecosystem: Each successful adoption helps advance domestic semiconductor capabilities, fostering innovation and a sustainable component ecosystem.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth transition, follow these steps:
Detailed Specification Comparison: Review all electrical parameters, characteristic curves, and application notes.
Rigorous Laboratory Testing: Perform static parameter verification, dynamic switching tests, efficiency measurements, and thermal/stress tests.
Small-Batch Pilot Verification: Deploy in actual end products under real operating conditions, monitoring long-term stability.
Develop a Switchover and Backup Plan: Phase in the substitute after full validation, while temporarily keeping the original design as a backup option.
Conclusion: Moving from "Usable" to "Excellent"
The progression from Renesas’ UPA1763G-E1-AT to VBsemi’s VBA3638 illustrates that domestic power semiconductors can not only match but exceed international benchmarks in key performance areas. Adopting such high-performance domestic components is a practical response to current supply chain dynamics and a strategic step toward building an autonomous, robust, and innovative industrial future. Now is the ideal time to actively evaluate and integrate high-quality domestic solutions like the VBA3638.