In high-power conversion systems such as switch-mode and resonant-mode power supplies, DC-DC converters, and other demanding applications, the Littelfuse IXYS IXFH52N50P2 has been a preferred choice for engineers worldwide, renowned for its fast intrinsic diode, avalanche rating, low RDS(on) and gate charge, low package inductance, and high power density. However, in the face of ongoing global supply chain uncertainties, extended lead times, and cost volatility associated with imported components, the need for a reliable, high-performance domestic alternative has become increasingly critical. This shift is essential for enterprises aiming to secure their supply chains, control costs, and enhance product competitiveness.
Leveraging its deep expertise in power semiconductor technology, VBsemi introduces the VBP15R50S N-channel power MOSFET. Designed as a direct, pin-to-pin replacement for the IXFH52N50P2, the VBP15R50S offers significant parametric advantages, advanced technology, and full package compatibility. It enables a seamless transition with no circuit modifications, delivering a more efficient, cost-effective, and locally supported solution for high-current power systems.
Enhanced Performance Parameters for Demanding Applications
The VBP15R50S is engineered to not only match but exceed the key performance metrics of the IXFH52N50P2, providing greater headroom and reliability:
With a drain-source voltage (VDS) of 500V, it matches the voltage rating of the original part, ensuring full compatibility in standard high-voltage applications. The continuous drain current (ID) is rated at a robust 50A, supporting high-power designs with ample current-handling capability.
A standout feature is the exceptionally low on-state resistance of just 80mΩ (measured at VGS=10V), a 33% improvement over the IXFH52N50P2's 120mΩ. This dramatic reduction in RDS(on) significantly minimizes conduction losses, leading to higher system efficiency, reduced thermal dissipation, and potentially smaller heatsinks or improved power density.
The device supports a gate-source voltage (VGS) of ±30V, offering strong noise immunity and robustness against gate stress. A gate threshold voltage (Vth) of 3.8V ensures reliable switching and compatibility with mainstream driver ICs, facilitating easy integration into existing designs.
Advanced Super Junction Multi-EPI Technology for High Efficiency and Reliability
The IXFH52N50P2 relies on its technology for low loss and fast switching. The VBP15R50S utilizes VBsemi's advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. This platform optimizes the trade-off between RDS(on) and gate charge, resulting in lower overall switching and conduction losses. The technology also enhances the device's avalanche ruggedness and dv/dt capability, ensuring stable operation under stressful conditions like switching transients and inductive load turn-off. The fast intrinsic diode characteristics minimize reverse recovery losses, which is crucial for efficiency in bridge topologies and hard-switching applications. The device is rated for an operating junction temperature up to 150°C and undergoes rigorous reliability testing, including HTGB and HTRB, guaranteeing long-term stability in harsh environments typical of industrial power systems.
Full Package Compatibility for Risk-Free, Drop-In Replacement
A major hurdle in component substitution is the engineering effort required for redesign. The VBP15R50S eliminates this concern entirely through its package design. It is offered in the industry-standard TO-247 package, which is mechanically and electrically identical to the package used by the IXFH52N50P2. The pinout, footprint, and mounting hole dimensions are fully compatible, allowing for a true "drop-in" replacement on existing PCB layouts. This compatibility slashes the time and cost of validation, bypassing the need for circuit redesign, thermal re-simulation, or mechanical modifications. Engineers can verify performance in their applications quickly, accelerating time-to-market for upgraded or cost-optimized products.
Local Supply Chain Assurance and Proactive Technical Support
Unlike imported components subject to logistical delays and geopolitical risks, VBsemi's domestic manufacturing base ensures a stable and responsive supply for the VBP15R50S. Lead times are consistently short and predictable, shielding customers from market shortages. As a local supplier, VBsemi provides dedicated, responsive technical support. Customers gain access to comprehensive documentation, including detailed datasheets, application notes, and replacement guides. The technical team offers prompt, personalized assistance for design-in queries, substitution验证, and optimization challenges, overcoming the slow response times often associated with overseas vendors.
From high-efficiency server SMPS and telecom rectifiers to industrial DC-DC converters and renewable energy inverters, the VBP15R50S, with its compelling advantages of lower conduction loss, high current capability, perfect package compatibility, stable supply, and local support, stands as the ideal domestic successor to the IXFH52N50P2. It has already been successfully adopted in numerous applications, earning strong market approval. Choosing the VBP15R50S is more than a component swap; it is a strategic move towards supply chain resilience, improved product performance, and sustainable cost efficiency—all achieved with zero redesign risk.