In power management applications such as DC-DC converters, motor drives, battery protection circuits, and high-current switching systems, the RENESAS 2SK3367-Z-E2-AZ has been a widely adopted N-channel MOSFET, valued for its balance of current handling and low on-resistance. However, global supply chain uncertainties, extended lead times, and cost volatility have driven the urgent need for a reliable, high-performance domestic alternative. Responding to this critical demand, VBsemi introduces the VBE1310—a meticulously designed, pin-to-pin replacement that not only matches but significantly surpasses the original component in key electrical parameters, offering a robust, cost-effective, and readily available solution for modern power designs.
Superior Electrical Performance: Higher Current, Lower Loss, Enhanced Efficiency
Tailored as a direct alternative to the 2SK3367-Z-E2-AZ, the VBE1310 delivers substantial upgrades across all critical specifications, ensuring higher performance margins and greater design flexibility:
- Continuous Drain Current (ID): Rated at 70A, the VBE1310 nearly doubles the current capability of the original 36A, providing ample headroom for higher-power applications and improving system reliability under heavy loads.
- On-Resistance (RDS(on)): With an ultra-low RDS(on) of 7mΩ (at VGS=10V), the VBE1310 achieves half the resistance compared to the 2SK3367’s 14mΩ (at VGS=4.0V). This dramatic reduction minimizes conduction losses, boosts overall efficiency, and reduces thermal stress—critical for high-frequency switching and high-current paths.
- Voltage Ratings: The device maintains a 30V drain-source voltage (VDS), perfectly matching the original rating, while supporting a ±20V gate-source voltage (VGS) for robust gate protection and noise immunity in demanding environments.
- Gate Threshold Voltage (Vth): At 1.7V, the VBE1310 ensures smooth compatibility with common driver ICs and microcontroller outputs, enabling easy integration without circuit modifications.
Advanced Trench Technology for Optimal Switching and Reliability
While the 2SK3367 relies on proven MOSFET design, the VBE1310 incorporates VBsemi’s advanced Trench technology, optimizing cell density and charge balance to achieve exceptionally low RDS(on) and high switching speed. This technology reduces internal capacitance, leading to faster turn-on/off transitions and lower switching losses—especially beneficial in high-frequency DC-DC converters and PWM-driven systems. The device is subjected to rigorous reliability testing, including 100% avalanche energy testing and high-temperature operating life (HTOL) validation, ensuring stable operation across an industrial temperature range and enhanced durability under repetitive switching stresses.
Full Package and Footprint Compatibility: Seamless Drop-In Replacement
The VBE1310 is offered in the industry-standard TO-252 (DPAK) package, which is mechanically and electrically compatible with the 2SK3367-Z-E2-AZ’s footprint. This exact pin-to-pin compatibility allows engineers to replace the original component without any PCB layout changes, thermal redesign, or structural adjustments. The substitution is truly “plug-and-play,” eliminating re-qualification efforts, reducing time-to-market, and avoiding additional costs associated with rework or retooling.
Local Supply Chain Stability and Responsive Technical Support
Unlike imported alternatives plagued by long lead times and logistical delays, VBsemi’s domestic manufacturing capability guarantees a stable, shortened supply cycle for the VBE1310. With lead times typically within 2–3 weeks and expedited support for urgent orders, customers gain greater control over production schedules and inventory management. Furthermore, VBsemi provides comprehensive local technical support, including detailed substitution guides, application notes, and circuit simulation models, along with responsive engineering assistance to ensure a smooth, risk-free transition.
Ideal for Diverse High-Current Applications
From server and telecom power supplies to automotive auxiliary systems, from motor drives in appliances to battery management in portable devices, the VBE1310 serves as a versatile, high-performance upgrade. Its superior current handling, lower conduction losses, and enhanced thermal characteristics make it an ideal choice for designers seeking to improve efficiency, power density, and long-term reliability.
Choosing the VBE1310 is more than a component substitution—it is a strategic upgrade that combines higher performance, secure supply, and local engineering support. With its exceptional parameter advantages and seamless compatibility, the VBE1310 stands as the intelligent domestic alternative to the RENESAS 2SK3367-Z-E2-AZ, empowering your designs with greater efficiency and reliability.