In high-power-density DC-DC applications such as synchronous rectification, VRMs for servers, and embedded DC-DC converters, Vishay's SIRA06DP-T1-GE3, with its TrenchFET Gen IV technology, 100% Rg and UIS testing, and low on-resistance, has been a preferred choice for engineers in design selection. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces challenges: unpredictable lead times, cost volatility due to exchange rates, and delayed technical support, which hinder production efficiency and cost control for downstream enterprises. In this context, domestic substitution has evolved from an option to a necessity, serving as a critical path to ensure supply chain security, reduce costs, and enhance core competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBQA1302 N-channel power MOSFET through independent R&D. This product directly对标s the SIRA06DP-T1-GE3, offering key advantages in parameter upgrades, technological parity, and full package compatibility. It enables a drop-in replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for high-density electronic systems.
Comprehensive Parameter Surpassing, Enhanced Performance for Demanding Conditions.
Tailored as a domestic alternative to the SIRA06DP-T1-GE3, the VBQA1302 achieves significant improvements in critical electrical parameters, providing robust performance for high-current applications:
First, the continuous drain current is dramatically increased to 160A, quadrupling the original model's 40A—a 300% enhancement. This allows seamless adaptation to higher-power designs, boosting system stability and enabling upgrades to more demanding loads.
Second, the on-state resistance is reduced to 1.8mΩ (@10V gate drive), superior to the SIRA06DP-T1-GE3's 2.5mΩ (@10V, 15A). This lowers conduction losses, improving overall efficiency and reducing heat generation in high-frequency switching scenarios, which eases thermal management design and cuts energy costs.
Additionally, the VBQA1302 maintains a drain-source voltage of 30V, matching the original, while supporting a ±20V gate-source voltage for enhanced gate ESD and noise immunity. The 1.7V gate threshold voltage ensures compatibility with mainstream driver ICs, facilitating easy integration without drive circuit adjustments, thus lowering the substitution barrier.
Advanced Trench Technology, Reliability Inherited and Elevated.
The SIRA06DP-T1-GE3 relies on TrenchFET Gen IV for low on-resistance and high reliability. The VBQA1302 employs advanced Trench technology, building on these strengths while optimizing device robustness. It undergoes 100% rigorous testing, including Rg and UIS assessments, ensuring excellent avalanche energy handling and surge protection during switching events. Through optimized capacitance design, it minimizes switching losses and enhances dv/dt tolerance, matching the application demands of the original model. The device operates over a wide temperature range and has passed extended reliability validations, with a failure rate below industry averages, making it ideal for critical applications like data centers, industrial controls, and telecom power systems.
Fully Compatible Package, Enabling Seamless Drop-In Replacement.
For enterprises, substitution costs and efforts are primary concerns. The VBQA1302 addresses this through its package design. It comes in a DFN8(5X6) package, which is fully compatible with the SIRA06DP-T1-GE3 in pinout, dimensions, and thermal interface. Engineers can directly replace the component on existing PCB layouts without redesigning circuits or thermal systems, achieving "plug-and-play" convenience. This compatibility slashes verification time—sample validation typically completes in 1-2 days—and avoids expenses from PCB revisions or retooling, accelerating supply chain cycles and helping firms swiftly adopt domestic alternatives.
Local Strength Assurance, Dual Peace of Mind for Supply and Support.
Compared to imported components vulnerable to logistics delays, trade policies, and currency fluctuations, VBsemi leverages China's mature semiconductor ecosystem, with production and R&D bases in regions like Jiangsu and Guangdong. This ensures full-process control and stable mass production for the VBQA1302. Standard lead times are compressed to under 2 weeks, with expedited orders enabling 72-hour delivery, mitigating risks from international volatility. As a local brand, VBsemi provides dedicated technical support: offering comprehensive documentation (substitution reports, datasheets, thermal guides, application circuits), tailored selection advice, and circuit optimization. Technical teams respond within 24 hours to resolve issues onsite or remotely, eliminating the slow support and high communication costs of imported parts, making substitution smooth and worry-free.
From synchronous rectification and high-power-density DC-DC VRMs to embedded converters, motor drives, and telecom infrastructure, the VBQA1302, with its core advantages of "higher current capacity, lower on-resistance, package compatibility, secured supply, and responsive service," has become the preferred domestic alternative to the SIRA06DP-T1-GE3. It has gained adoption in leading companies across industries, earning strong market recognition. Choosing the VBQA1302 is not just a component swap—it's a strategic move to bolster supply chain resilience, optimize costs, and boost product competitiveness, offering superior performance, stable supply, and seamless support without R&D modification risks.