In various low-voltage, high-current application scenarios such as power management systems, motor drives, battery protection circuits, DC-DC converters, and automotive electronics, Nexperia's PSMN4R0-60YS,115, with its advanced Trench MOSFET technology, low on-resistance, and high current-handling capability, has been a preferred choice for engineers worldwide. However, amid global supply chain uncertainties and trade volatilities in the post-pandemic era, this imported component faces increasing challenges: unpredictable lead times (often extending to several months), procurement costs affected by currency fluctuations, and delayed technical support. These issues significantly hinder production schedules and cost optimization for downstream enterprises. In this context, domestic substitution has evolved from an "alternative" to a "necessity," serving as a critical strategy for ensuring supply chain security, reducing costs, and enhancing core competitiveness.
Leveraging years of expertise in power semiconductor design, VBsemi introduces the VBED1603 N-channel MOSFET, developed through independent R&D. This product is precisely tailored as a direct alternative to the PSMN4R0-60YS,115, offering core advantages of parameter enhancements, technological parity, and full package compatibility. It enables seamless replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for low-voltage, high-current electronic systems.
Comprehensive Parameter Advancements, Enhanced Performance Margins, Adapting to Demanding Conditions.
Designed as a domestic drop-in replacement for the PSMN4R0-60YS,115, the VBED1603 achieves significant improvements in key electrical parameters, providing superior performance guarantees:
First, the drain-source voltage is maintained at 60V, matching the original model, while ensuring robust operation in environments with voltage variations. Second, the continuous drain current is rated at 100A, equivalent to the original, but with optimized thermal handling for higher reliability. Most notably, the on-state resistance is reduced to 2.9mΩ (@10V gate drive), a 27.5% improvement over the PSMN4R0-60YS,115's 4mΩ (@10V, 15A). This lower RDS(on) minimizes conduction losses, directly boosting system efficiency and reducing heat generation—critical for high-current applications like motor drives and power supplies. Additionally, the VBED1603 supports a ±20V gate-source voltage, offering enhanced gate ESD protection and noise immunity, preventing false triggering in noisy environments. The 2.4V gate threshold voltage ensures compatibility with mainstream driver ICs, simplifying drive circuit design and lowering substitution barriers.
Enhanced with Advanced Trench Technology, Reliability and Stability Upgraded.
The PSMN4R0-60YS,115 relies on Trench MOSFET technology for low on-resistance and fast switching. The VBED1603 employs an optimized Trench process, building on these strengths while improving device reliability. It undergoes rigorous pre-shipment testing, including 100% avalanche and high-current screening, demonstrating excellent avalanche energy tolerance and durability under surge conditions. Through refined intrinsic capacitance design, switching losses are reduced, and dv/dt performance is enhanced, ensuring stable operation in high-frequency switching scenarios. The device operates over a wide temperature range of -55°C to 150°C, suitable for harsh industrial and automotive environments. Having passed extended reliability tests such as high-temperature/high-humidity aging, its failure rate is well below industry averages, making it ideal for critical applications like automotive systems, industrial controls, and renewable energy inverters.
Fully Compatible Package, Enabling "Plug-and-Play" Replacement.
For downstream enterprises, substitution simplicity is paramount. The VBED1603 addresses this through its package design. It uses an LFPAK56 package, identical to the PSMN4R0-60YS,115 in pinout, dimensions, and thermal pad layout. Engineers can directly replace the original component without PCB redesign or thermal system adjustments, achieving true "drop-in" compatibility. This high compatibility slashes verification time—sample validation typically completes within 1-2 days—and avoids costs associated with board re-spins or tooling changes. It also preserves product certifications and外观 design, accelerating time-to-market and enabling quick adoption of domestic alternatives.
Local Strength Assurance, Dual Peace of Mind for Supply Chain and Technical Support.
Compared to imported components plagued by logistics delays and trade risks, VBsemi leverages China's robust semiconductor ecosystem, with modern production bases in Jiangsu and Guangdong. This ensures full-process control and stable mass production for the VBED1603. Standard lead times are shortened to under 2 weeks, with expedited orders enabling 72-hour delivery, mitigating uncertainties from global supply chains, tariffs, or geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation (including substitution验证 reports, datasheets, thermal guides, and application circuits), tailored selection advice, and circuit optimization. Technical queries receive 24-hour responses, with on-site or remote assistance, eliminating the slow support and high communication costs of imported brands and ensuring a smooth substitution journey.
From power management and motor drives to battery protection and automotive electronics; from DC-DC converters and industrial controls to renewable energy systems, the VBED1603, with its core advantages of "lower on-resistance, enhanced reliability, package compatibility, supply chain control, and responsive service," has become the preferred domestic alternative to the PSMN4R0-60YS,115. It has already been adopted by leading companies across industries, gaining strong market recognition. Choosing the VBED1603 is not just a component swap—it's a strategic move to secure supply chains, cut costs, and boost product competitiveness, offering superior performance, stable supply, and local support without R&D redesign risks.