Driven by the dual trends of automotive electrification and industrial energy efficiency upgrades, the demand for high-performance, low-loss power devices in low-voltage applications continues to grow. In scenarios such as automotive auxiliary systems, portable devices, and high-density power supplies, achieving lower conduction resistance, higher current capability, and better thermal performance within limited space has become a key challenge for designers. When focusing on the widely used 30V N-channel MOSFET from ROHM—the RQ3E100BNTB—the VBQF1310, introduced by VBsemi, stands out as an excellent domestic alternative. It not only maintains hardware compatibility but also delivers enhanced performance through advanced Trench technology, realizing a value transition from "direct replacement" to "performance upgrade."
I. Parameter Comparison and Performance Advantages: Enhanced Current Capability and Optimized Switching
The RQ3E100BNTB has gained popularity in switching applications due to its 30V drain-source voltage, 21A continuous drain current, and low RDS(on) of 10.4mΩ @10V, packaged in the space-saving HSMT8. However, as power density requirements increase and thermal constraints tighten, higher current handling and improved efficiency are needed.
1. Building on the same 30V VDS rating and a compact DFN8(3x3) package, the VBQF1310 achieves notable improvements in key electrical parameters through advanced Trench MOSFET technology:
Higher Current Rating: With a continuous drain current ID of 30A, the VBQF1310 provides approximately 43% higher current capability compared to the reference model, supporting higher load conditions or enabling parallel design for lower losses.
2. Optimized Conduction Resistance: While the RQ3E100BNTB specifies RDS(on) as 10.4mΩ @ VGS=10V, the VBQF1310 offers RDS(on) of 13mΩ @ VGS=10V and further reduced resistance at lower gate drives, balancing performance with drive flexibility. The low threshold voltage Vth of 1.7V ensures easy turn-on, suitable for low-voltage logic control.
3. Enhanced Power Dissipation and Thermal Performance: The VBQF1310 is designed for efficient heat dissipation in the DFN8 package, supporting reliable operation in high-ambient or continuous-load scenarios, such as DC-DC converters or motor drive circuits.
II. Application Scenarios: From Switching Power Supplies to Compact Motor Drives
The VBQF1310 not only serves as a pin-to-pin alternative in existing RQ3E100BNTB applications but also enables system-level performance improvements:
1. Switching Power Supplies (DC-DC, Buck/Boost Converters)
The low RDS(on) and high current capability help reduce conduction losses, improving efficiency across load ranges. The compact DFN8 package saves PCB space, supporting high-density power design in applications like onboard chargers, USB-PD, and point-of-load converters.
2. Automotive Auxiliary Systems (Pumps, Fans, Window Controls)
With 30V rating and high current handling, the VBQF1310 is ideal for 12V/24V automotive low-voltage systems, offering robust performance under load variations and temperature fluctuations.
3. Portable Devices and Battery Management
The low Vth and efficient switching characteristics make it suitable for battery-powered tools, drones, and portable electronics, extending battery life through reduced power loss.
4. Industrial Control and Motor Drives
Can be used in low-voltage motor drives, solenoid controls, and PLC output stages, where high current and fast switching enhance response speed and reliability.
III. Beyond Performance: Supply Chain Stability and Cost Efficiency
Selecting the VBQF1310 is both a technical and strategic decision:
1. Domestic Supply Chain Assurance
VBsemi controls the full process from chip design to packaging and testing, ensuring stable supply, shorter lead times, and reduced risk from global trade uncertainties.
2. Cost-Effective Solution
With competitive pricing and performance comparable to international brands, the VBQF1310 helps reduce BOM costs while maintaining high quality, offering better value for high-volume applications.
3. Local Technical Support
VBsemi provides end-to-end support from selection to validation, helping customers optimize drive circuits, thermal layout, and system reliability, accelerating time-to-market.
IV. Replacement Guidelines and Design Considerations
For designs currently using or planning to use the RQ3E100BNTB, the following steps are recommended:
1. Electrical Validation
Verify switching behavior, gate drive requirements, and loss distribution under actual operating conditions. The VBQF1310’s higher current rating may allow design margin or reduction of parallel devices.
2. Thermal and Layout Evaluation
The DFN8 package requires attention to PCB thermal design. Ensure adequate copper area and via patterns for heat dissipation to maximize performance.
3. Reliability and System Testing
Perform electrical, thermal, and environmental tests to validate long-term reliability before full-scale adoption.
Driving Forward with Domestic Innovation in Power Electronics
The VBsemi VBQF1310 is not just an alternative to the ROHM RQ3E100BNTB—it is a high-current, high-efficiency MOSFET solution designed for next-generation low-voltage power systems. Its advantages in current capability, compact packaging, and thermal performance can help customers achieve higher power density, improved efficiency, and enhanced supply chain resilience.
In an era of increasing demand for energy efficiency and component localization, choosing the VBQF1310 is a strategic step toward technological independence and competitive advantage. We recommend this product and look forward to partnering with you to innovate and excel in power electronics design.