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VBP112MC100: The Superior Domestic SiC MOSFET Alternative to ROHM SCT3022KLHRR11, Engineered for High-Power Efficiency and Reliability
time:2026-02-26
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In high-power applications such as server & telecom power supplies, industrial motor drives, solar inverters, and electric vehicle charging systems, ROHM's SCT3022KLHRC11 SiC MOSFET, with its low on-resistance and fast switching performance, has been a benchmark for designers seeking efficiency and power density. However, global supply chain vulnerabilities, extended lead times, and cost volatility pose significant challenges for project timelines and budgeting. This urgency transforms the search for a reliable, high-performance domestic alternative from a contingency plan into a strategic imperative for supply chain resilience and cost optimization.
Leveraging deep expertise in wide-bandgap semiconductors, VBsemi introduces the VBP112MC100, a Silicon Carbide MOSFET meticulously engineered to match and surpass the SCT3022KLHRC11. It offers a seamless, pin-to-pin compatible replacement with enhanced electrical characteristics, ensuring a straightforward upgrade path without circuit redesign, thereby providing a more secure, cost-effective, and high-performance solution.
Performance Superiority: Lower Losses, Enhanced Robustness
The VBP112MC100 delivers critical parameter advancements over the SCT3022KLHRC11, providing greater design margin and efficiency:
Voltage Rating: It maintains the same 1200V drain-source voltage (Vdss), ensuring robust operation in high-voltage bus applications.
Drastically Reduced Conduction Loss: The standout feature is its remarkably low on-resistance of only 16mΩ (typical @ Vgs=18V), a substantial 44% improvement over the 28.6mΩ of the SCT3022KLHRC11. This directly translates to lower power dissipation, higher system efficiency, and reduced thermal management demands.
Optimized Gate Drive: With a gate-source voltage (VGS) range of -10V to +22V and a standard gate threshold (Vth) of 2-4V, it ensures robust noise immunity and reliable switching, compatible with common SiC gate driver ICs.
Advanced SiC Technology: Built on VBsemi's mature SiC-S platform, the device inherently offers superior switching speed, lower switching losses, and excellent high-temperature operation compared to traditional silicon, aligning perfectly with the performance pedigree of the original part.
Advanced SiC-S Technology: Unlocking Efficiency and Reliability
The VBP112MC100 utilizes state-of-the-art Silicon Carbide technology, which is fundamental to its performance edge. SiC material properties enable significantly faster switching frequencies, reduced reverse recovery losses, and stable operation at temperatures exceeding 150°C junction temperature. This allows designers to push the limits of power density and efficiency. The device undergoes rigorous reliability testing, including HTRB and high-temperature switching endurance, ensuring long-term stability in demanding environments like renewable energy systems and industrial automation.
Seamless Drop-In Replacement: Zero Design Risk
The VBP112MC100 is offered in the industry-standard TO-247 package, providing full mechanical and footprint compatibility with the SCT3022KLHRC11. Engineers can replace the component on existing PCB layouts without modifying the copper design, heatsink interface, or assembly process. This "plug-and-play" substitution eliminates requalification costs, drastically shortens validation cycles, and accelerates time-to-market for upgraded or new designs.
Guaranteed Supply and Localized Support
VBsemi's domestic manufacturing and controlled supply chain ensure stable inventory and predictable lead times, shielding customers from international logistics disruptions. Coupled with local technical support offering rapid response, in-depth application guidance, and comprehensive documentation, the transition to VBP112MC100 becomes a smooth and low-risk endeavor.
From high-efficiency power converters to robust traction inverters, the VBP112MC100 emerges as the intelligent choice for replacing the SCT3022KLHRC11. It combines the inherent benefits of SiC technology with superior electrical specs, full compatibility, and the security of a local supplier. Adopting the VBP112MC100 is a strategic step toward enhancing product performance, securing the supply chain, and achieving a sustainable competitive advantage.
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