In various high-power, high-frequency application scenarios such as electric vehicle charging systems, solar inverters, industrial motor drives, and server power supplies, Qorvo's UJ4SC075011K4S, with its advanced Silicon Carbide (SiC) technology, high-voltage capability, and robust current handling, has been a preferred choice for engineers worldwide during design selection. However, against the backdrop of global supply chain uncertainties and rising international trade barriers in the post-pandemic era, this imported component has gradually exposed several pain points: extended lead times (often 4-8 months), procurement costs vulnerable to currency fluctuations, and delayed technical support responses. These issues severely impact downstream companies' production schedules and cost-efficiency. Given this industry demand, domestic substitution has evolved from an "option" to a "necessity," becoming a critical path for enterprises to ensure supply chain security, reduce costs, enhance efficiency, and strengthen core competitiveness.
VBsemi, leveraging years of expertise in the power semiconductor field, has launched the VBP165C93-4L N-channel SiC MOSFET based on its independent R&D capabilities. This product precisely对标es the UJ4SC075011K4S, offering core advantages of technological parity, performance optimization, and full package compatibility. It can serve as a direct replacement without modifications to the original circuit, providing a more stable, cost-effective, and locally attuned high-quality solution for various high-power electronic systems.
Comprehensive Performance Optimization, Leveraging SiC Advantages for Enhanced Efficiency.
Tailored as a domestic alternative to the UJ4SC075011K4S, the VBP165C93-4L achieves significant improvements in key electrical parameters through advanced SiC technology, delivering superior performance for demanding applications:
Firstly, the drain-source voltage is set at 650V, providing ample margin for many high-voltage applications. While slightly lower than the original model's 750V, this is compensated by the superior switching characteristics and efficiency of SiC, ensuring reliable operation in industrial environments with stable grid conditions or optimized system designs.
Secondly, the continuous drain current is rated at 22A, which, combined with the low on-state resistance, enables high efficiency in medium-power applications. The device excels in scenarios where lower current but higher switching frequency is required, such as in compact power supplies or frequency converters, reducing overall system size and cost.
Thirdly, the on-state resistance is as low as 22mΩ (@18V gate drive), a remarkable achievement for SiC MOSFETs. This drastically reduces conduction losses compared to traditional silicon-based alternatives, directly translating to higher overall system efficiency. In high-frequency switching applications, it minimizes heat generation, lowering cooling system demands and energy costs.
Additionally, the VBP165C93-4L supports a gate-source voltage range of -4V to +22V, offering robust gate ESD protection and noise immunity, preventing unintended turn-on in complex electromagnetic environments. The gate threshold voltage of 2-5V ensures compatibility with mainstream driver ICs, facilitating easy integration without drive circuit adjustments, further simplifying the substitution process.
Advanced SiC Technology, Reliability and Stability Redefined.
The core advantage of the UJ4SC075011K4S lies in its high-voltage and high-current capabilities enabled by SiC technology. The VBP165C93-4L builds on this with enhanced planar gate design and optimized SiC process, delivering superior reliability across multiple dimensions. The device undergoes rigorous avalanche testing and high-voltage screening before leaving the factory, exhibiting excellent single-pulse avalanche energy performance. It can handle energy surges during high-voltage turn-off with ease, reducing the risk of device failure. Through optimized intrinsic capacitance design, it not only lowers switching losses but also improves dv/dt tolerance, making it ideal for high-frequency applications like the UJ4SC075011K4S. Even under harsh conditions such as rapid transients and high temperatures, it maintains stable operation and can be directly replaced without circuit topology changes. Furthermore, the VBP165C93-4L features an extended operating temperature range, typically from -55°C to 175°C, adapting to extreme industrial and outdoor environments. Having passed long-term reliability tests, including high-temperature/high-humidity aging, its failure rate is significantly below industry averages, ensuring durable performance for critical applications like renewable energy systems, industrial automation, and data centers.
Fully Compatible Package, Enabling Seamless and Immediate Replacement.
For downstream enterprises, a key concern in domestic substitution is the R&D effort and time involved. The VBP165C93-4L addresses this through its package design. The device uses a TO247-4L package, which is fully compatible with the UJ4SC075011K4S's package in terms of pinout, pin spacing, dimensions, and heatsink interface. Engineers can perform a "plug-and-play" replacement without modifying PCB layouts or thermal designs. This high compatibility reduces substitution verification time to 1-2 days for sample testing, eliminating the need for circuit redesign or simulation. It also avoids additional costs from PCB revisions and mold adjustments, preserving original product structures and certifications. This accelerates the supply chain cycle, helping enterprises quickly adopt domestic alternatives and capture market opportunities.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Compared to the volatile supply chain of imported components, affected by international logistics, trade policies, and exchange rates, VBsemi leverages China's robust semiconductor industry chain, with modern production bases and R&D centers in Jiangsu, Guangdong, and other regions. This enables full-process independent R&D and stable mass production of the VBP165C93-4L. Currently, the standard lead time for this model is within 3 weeks, with expedited orders allowing 1-week rapid delivery. This mitigates risks from global supply disruptions, tariffs, and geopolitics, ensuring smooth production schedules. As a local brand, VBsemi offers a professional technical support team with "one-on-one" customized services: providing comprehensive documentation, including substitution verification reports, datasheets, thermal design guides, and application circuit references. Based on specific customer scenarios, the team gives tailored selection advice and circuit optimization solutions. For any technical issues during substitution, responses are provided within 24 hours, assisting with on-site or remote resolution. This addresses the slow support and high communication costs of imported components, making the substitution process smooth and worry-free.
From electric vehicle chargers and solar inverters to industrial motor drives and server power supplies; from UPS systems and welding equipment to high-frequency power converters, the VBP165C93-4L, with its core advantages of "advanced SiC technology, lower losses, package compatibility, controllable supply, and responsive service," has become the preferred domestic alternative to the UJ4SC075011K4S. It has already been adopted by leading companies across multiple industries, gaining strong market recognition. Choosing the VBP165C93-4L is not just a component replacement; it is a strategic move for enterprises to upgrade supply chain security, optimize costs, and enhance product competitiveness—requiring no R&D modification risks while enjoying higher efficiency, more stable supply, and more convenient technical support.