In high-power, high-frequency application scenarios such as electric vehicle charging stations, solar inverters, industrial motor drives, and high-density power supplies, Qorvo's UF4SC120030K4S SiC MOSFET, with its high-voltage capability, high current handling, and low switching losses, has been a preferred component for engineers worldwide in demanding designs. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported part has revealed significant pain points: extended lead times (often exceeding 4-6 months), costs vulnerable to currency fluctuations, and delayed technical support. These challenges increasingly constrain production schedules and cost efficiency for downstream enterprises. Against this backdrop, domestic substitution has evolved from an "alternative" to a "necessity," becoming a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitive advantage.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBP112MC50-4L SiC MOSFET through independent R&D. This product is precisely tailored as a domestic alternative to the UF4SC120030K4S, offering core advantages of parameter compatibility, technological parity, and full package equivalence. It serves as a direct drop-in replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for high-voltage electronic systems.
Comprehensive Parameter Alignment with Enhanced Performance Margins for Robust Operation.
Designed as a seamless alternative to the UF4SC120030K4S, the VBP112MC50-4L matches or optimizes key electrical parameters, ensuring reliable performance in high-power applications:
First, the drain-source voltage is maintained at 1200V, equaling the original model's 1.2kV rating. This provides a solid foundation for high-voltage operations in industries like renewable energy and industrial automation, where grid stability and transient overvoltage risks are prevalent.
Second, the continuous drain current is rated at 36A, supported by an optimized SiC technology that ensures efficient current handling. While the original model offers 53A, the VBP112MC50-4L's advanced design reduces conduction losses, making it suitable for applications where thermal management and efficiency are prioritized. For higher current needs, parallel configurations can be easily implemented due to its stable characteristics.
Third, the on-state resistance is as low as 36mΩ (@18V gate drive), leveraging SiC's inherent advantages for lower conduction losses compared to traditional silicon-based devices. This significantly enhances system efficiency, reduces heat generation, and alleviates cooling system demands—critical for high-frequency switching in compact designs.
Additionally, the VBP112MC50-4L supports a wide gate-source voltage range of -4V to +22V, offering robust gate ESD protection and noise immunity to prevent unintended switching in harsh electromagnetic environments. The gate threshold voltage of 2-5V ensures compatibility with mainstream driver ICs, facilitating easy integration without drive circuit adjustments, thus lowering substitution barriers.
Advanced SiC Technology for Superior Reliability and Stability.
The UF4SC120030K4S relies on SiC technology for high efficiency and fast switching. The VBP112MC50-4L employs state-of-the-art planar SiC MOSFET process, enhancing device reliability across multiple dimensions. It undergoes 100% avalanche testing and high-voltage screening, exhibiting excellent single-pulse avalanche energy tolerance to handle surge events during high-voltage turn-off, minimizing failure risks. Through optimized intrinsic capacitance design, it reduces switching losses and improves dv/dt tolerance, matching the UF4SC120030K4S's application scenarios seamlessly. Even under high-frequency switching and fast transients, it maintains stable operation. Moreover, the device features an operating temperature range of -55°C to 150°C, adapting to extreme conditions like industrial high-heat or outdoor environments. Having passed rigorous 1000-hour high-temperature/high-humidity (85°C/85% RH) aging tests and long-term reliability verification, its failure rate is well below industry averages, ensuring durable performance for critical applications such as EV charging, industrial controls, and energy infrastructure.
Fully Compatible Package Enabling "Drop-In, Risk-Free, Immediate" Replacement.
For downstream enterprises, domestic substitution often concerns R&D effort and timeline. The VBP112MC50-4L addresses this via package design. It utilizes a TO247-4L package, identical to the UF4SC120030K4S in pinout, pin spacing, dimensions, and heatsink interface. Engineers require no PCB layout changes or thermal redesign, achieving "plug-and-play" replacement. This compatibility slashes verification time—sample validation typically completes within 1-2 days—while avoiding costs from PCB revisions or retooling. It also preserves original structural certifications and外观 designs, accelerating supply chain integration and helping enterprises swiftly upgrade imported components to capture market opportunities.
Local Strength Assurance for Supply Chain Security and Technical Support.
Unlike imported parts plagued by logistics delays, trade policies, and exchange rate volatility, VBsemi leverages China's robust semiconductor ecosystem, with modern production bases and R&D centers in Jiangsu and Guangdong. This enables full-process control and stable mass production of the VBP112MC50-4L. Standard lead times are compressed to under 3 weeks, with expedited orders allowing 1-week rapid delivery, mitigating risks from global supply chain disruptions, tariffs, or geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation including substitution验证 reports, datasheets, thermal guides, and application circuits, plus tailored advice based on customer scenarios. For substitution issues, the technical team responds within 24 hours for on-site or remote resolution, eliminating slow support and high communication costs associated with imported components.
From EV charging piles and solar inverters to industrial motor drives and high-density power supplies, the VBP112MC50-4L, with its core strengths of "parameter compatibility, reliable SiC performance, package equivalence, controlled supply, and responsive service," has become the preferred domestic alternative to the UF4SC120030K4S. It is already adopted by leading firms across industries, earning strong market recognition. Choosing the VBP112MC50-4L is not just a component swap—it is a strategic move to upgrade supply chain resilience, optimize costs, and boost product competitiveness, offering enhanced performance, stable supply, and seamless support without R&D modification risks.