Driven by the global trends of automotive electrification and industrial upgrade, the demand for reliable, efficient, and cost-effective mid-voltage power devices is rapidly growing. In this context, securing a stable supply of core components while enhancing system performance has become a critical challenge for manufacturers. Focusing on the widely used 600V N-channel MOSFET from ROHM—the R6030KNZ1C9—the VBP16R32S from VBsemi emerges as a powerful domestic alternative. It not only matches the key specifications but achieves significant performance improvements through advanced SJ_Multi-EPI technology, transforming the substitution from a "direct replacement" into a "system upgrade."
I. Parameter Comparison and Performance Enhancement: Advantages of SJ_Multi-EPI Technology
The R6030KNZ1C9 has been favored in applications such as motor drives, SMPS, and PFC circuits due to its 600V voltage rating, 30A continuous current, and 115mΩ on-resistance. However, with increasing efficiency demands and thermal constraints, its conduction and switching losses present limitations for next-generation designs.
1.Building on the same 600V drain-source voltage and TO-247 package compatibility, the VBP16R32S achieves notable breakthroughs in electrical performance via advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology:
Reduced On-Resistance: With VGS = 10V, the RDS(on) is lowered to 85mΩ, a 26% reduction compared to the reference model. This directly lowers conduction losses (Pcond = I_D^2 · RDS(on)) at high load conditions, improving efficiency and thermal performance.
2.Higher Current Capability: The continuous drain current rating is increased to 32A, offering greater margin and robustness in high-current applications.
3.Optimized Switching Characteristics: The device features improved gate charge and capacitance characteristics, enabling lower switching losses and better performance in high-frequency circuits.
II. Expanding Application Scenarios: From Replacement to Performance Lift
The VBP16R32S can serve as a pin-to-pin replacement in existing designs using the R6030KNZ1C9 while enabling system-level enhancements:
1.Switched-Mode Power Supplies (SMPS) & PFC Stages
Lower conduction loss improves efficiency across load ranges. The enhanced switching performance supports higher frequency operation, reducing passive component size and cost.
2.Motor Drive & Inverter Circuits
Suitable for fan drives, pump controls, and industrial inverters, the higher current rating and lower RDS(on) allow for more compact designs and improved thermal management.
3.Industrial & Renewable Energy Systems
In applications such as solar inverters, UPS, and welding equipment, the 600V rating and robust performance ensure reliable operation under high-voltage bus conditions.
4.Automotive Auxiliary Systems
Can be used in on-board chargers, DC-DC converters, and other auxiliary power modules in electric and hybrid vehicles, where efficiency and temperature stability are critical.
III. Beyond Specifications: Reliability, Supply Assurance, and Added Value
Choosing the VBP16R32S is both a technical and strategic decision:
1.Domestic Supply Chain Stability
VBsemi ensures full control over design, fabrication, and testing, providing a secure and predictable supply chain, reducing dependency on external fluctuations.
2.Cost Efficiency
With superior parameters and competitive pricing, the VBP16R32S helps lower BOM costs while boosting system performance and end-product competitiveness.
3.Local Technical Support
Customers gain access to responsive, full-cycle support from selection and simulation to testing and failure analysis, accelerating development and issue resolution.
IV. Replacement Guidance and Implementation Steps
For designs currently using or considering the R6030KNZ1C9, the following steps are recommended:
1.Electrical Validation
Compare switching waveforms, loss distribution, and temperature rise under same circuit conditions. Optimize gate drive parameters to leverage the improved switching performance of the VBP16R32S.
2.Thermal Re-assessment
Due to lower losses, heat sink requirements may be reduced, allowing potential savings in size or cost of thermal management.
3.System Reliability Testing
Perform rigorous electrical, thermal, and environmental tests before moving to field validation to ensure long-term stability and performance.
Towards a Self-Reliant, High-Efficiency Power Electronics Future
The VBsemi VBP16R32S is not just an alternative to the ROHM R6030KNZ1C9—it is a high-performance, high-reliability MOSFET that enables efficiency gains, higher power density, and better thermal performance in mid-voltage applications.
In an era of increasing demand for electrification and supply chain autonomy, adopting the VBP16R32S is both a smart engineering choice and a strategic step toward sustainable, independent innovation. We recommend this solution and look forward to partnering with you to advance the next generation of power electronics.