In high-power application scenarios such as motor drives, power conversion systems, industrial inverters, welding equipment, and server power supplies, Littelfuse IXYS's IXFX220N17T2, with its high current-carrying capacity and low on-resistance, has been a popular choice for engineers worldwide. However, in the post-pandemic era, this imported component faces challenges like unstable lead times (often extending to several months), procurement costs affected by exchange rate volatility, and delayed technical support. These issues severely impact production schedules and cost control for downstream enterprises. Against this backdrop, domestic substitution has evolved from an "option" to a "necessity," becoming a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBGP11505 N-channel MOSFET based on independent R&D. This product is precisely designed as a domestic alternative to the IXFX220N17T2, offering key advantages in parameter enhancements, technological parity, and full package compatibility. It can serve as a direct drop-in replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for various high-current electronic systems.
Comprehensive Parameter Advancements, Enhanced Performance for Demanding Conditions.
Tailored as a domestic alternative to the IXFX220N17T2, the VBGP11505 achieves significant improvements in critical electrical parameters, providing robust performance for high-current applications:
First, the continuous drain current is increased to 180A, a substantial 63.6% upgrade over the original model's 110A. This enhancement allows effortless handling of higher power loads, making it suitable for upgrading existing equipment or improving system stability in high-current designs.
Second, the on-state resistance is reduced to 4.4mΩ (@10V gate drive), significantly lower than the IXFX220N17T2's 6.3mΩ—a 30% improvement. This reduction minimizes conduction losses, boosting overall efficiency and reducing heat generation, which alleviates cooling system demands and energy costs.
Third, the drain-source voltage is rated at 150V, which, while slightly lower than the original 170V, remains sufficient for many industrial and commercial applications, such as motor drives and power supplies operating below 150V. This design optimizes performance for targeted use cases while maintaining a safety margin. Additionally, the VBGP11505 supports a ±20V gate-source voltage, offering strong gate ESD and noise immunity, and features a 3.5V gate threshold voltage for easy integration with mainstream driver ICs, ensuring reliable switching without drive circuit adjustments.
Enhanced with Advanced SGT Technology, Reliability and Stability Upgraded.
The IXFX220N17T2 relies on its low on-resistance and high current capability for performance. The VBGP11505 employs state-of-the-art Shielded Gate Trench (SGT) technology, which not only matches but exceeds the original model's switching characteristics. This technology optimizes device reliability through reduced switching losses and improved dv/dt tolerance. The device undergoes rigorous pre-shipment testing, including avalanche energy validation, ensuring resilience against energy surges during high-current switching. With an operating temperature range of -55°C to 150°C, it withstands harsh industrial environments and has passed long-term reliability tests, such as high-temperature/high-humidity aging, resulting in a failure rate below industry averages. This makes it ideal for critical applications like industrial automation, renewable energy systems, and automotive electronics, where durability is paramount.
Fully Compatible Package, Enabling "Plug-and-Play" Replacement.
For downstream enterprises, a major concern in domestic substitution is the cost and effort of redesign. The VBGP11505 addresses this seamlessly through its package design. It uses a TO-247 package, identical to the IXFX220N17T2 in pinout, pin spacing, dimensions, and heatsink compatibility. Engineers can directly replace the component without modifying PCB layouts or thermal systems, achieving a true "plug-and-play" transition. This high compatibility reduces verification time—sample validation can be completed within 1–2 days—and eliminates costs associated with PCB revisions or retooling. It also preserves original product certifications and外观 designs, accelerating supply chain cycles and enabling fast adoption of domestic alternatives.
Local Strength Assurance, Dual Peace of Mind for Supply Chain and Support.
Compared to imported components plagued by supply chain disruptions, VBsemi leverages China's robust semiconductor ecosystem, with modern production bases in Jiangsu and Guangdong, ensuring full-process R&D and stable mass production of the VBGP11505. Lead times are compressed to under 2 weeks, with expedited orders delivered within 72 hours, mitigating risks from international logistics, tariffs, or geopolitical issues. As a local brand, VBsemi provides dedicated technical support, including comprehensive documentation—substitution验证 reports, datasheets, thermal guides, and application circuits—along with customized solutions based on customer needs. Technical issues receive 24-hour responses, resolving pain points like slow support and high communication costs, making substitution smooth and worry-free.
From motor drives and industrial inverters to power supplies and renewable energy systems, the VBGP11505, with its core advantages of "higher current, lower resistance, package compatibility,可控 supply, and responsive service," has become the preferred domestic alternative to the IXFX220N17T2. It has already been adopted by leading companies across various sectors, earning strong market recognition. Choosing the VBGP11505 is not just a component replacement; it is a strategic move toward securing supply chains, optimizing costs, and boosting product competitiveness—offering superior performance, stable supply, and seamless support without R&D risks.