In demanding applications such as high-efficiency switch-mode power supplies, motor drives, industrial inverters, and power conversion systems, STMicroelectronics’ STP14NM50N N-channel power MOSFET, built with the second-generation MDmesh™ technology, has been a preferred choice for engineers due to its low on-resistance, excellent switching performance, and robust design. However, in today's global landscape marked by supply chain uncertainties, extended lead times, and fluctuating costs, reliance on imported components like the STP14NM50N poses significant challenges for manufacturers—delaying production schedules, increasing procurement expenses, and complicating technical support. In this context, domestic substitution is no longer merely an alternative but a strategic imperative to secure supply chains, reduce costs, and strengthen competitive advantage.
Leveraging its extensive expertise in power semiconductor design and manufacturing, VBsemi introduces the VBM15R11S—a high-performance N-channel MOSFET engineered as a direct, pin-to-pin replacement for the STP14NM50N. With fully compatible packaging, upgraded electrical characteristics, and locally assured supply, the VBM15R11S offers a reliable, cost-effective, and readily available solution for next-generation power designs.
Superior Electrical Parameters with Enhanced Design Margin
Designed to match and exceed the STP14NM50N in critical performance aspects, the VBM15R11S delivers outstanding specifications tailored for high-voltage, high-current operations:
- Drain-Source Voltage (Vdss): 500V, identical to the STP14NM50N, ensuring full compatibility in 500V-rated applications while providing robust overvoltage withstand capability.
- Continuous Drain Current (Id): 11A, offering ample current-handling capacity for most circuit requirements, closely matching the original 12A rating with sufficient margin for real-world operating conditions.
- On-State Resistance (RDS(on)): 380mΩ @ 10V gate drive, comparable to the STP14NM50N’s 320mΩ, resulting in low conduction losses, improved efficiency, and reduced thermal stress in high-frequency switching circuits.
- Gate-Source Voltage (VGS): ±30V, providing strong noise immunity and ESD protection, preventing unwanted turn-on in electrically noisy environments.
- Gate Threshold Voltage (Vth): 3.2V, ensuring reliable switching and easy drive compatibility with standard gate driver ICs, without requiring circuit modifications.
Advanced Multi-EPI Junction Technology for High Efficiency and Reliability
While the STP14NM50N utilizes ST’s proprietary MDmesh™ vertical technology to achieve low RDS(on) and fast switching, the VBM15R11S employs VBsemi’s advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. This innovative structure delivers similarly low conduction and switching losses, excellent dv/dt robustness, and high avalanche energy capability. Each device undergoes 100% avalanche energy and high-voltage screening, ensuring consistent performance and long-term reliability under repetitive switching and transient conditions. With an operating temperature range of -55°C to 150°C and validation through extended high-temperature/high-humidity reliability tests, the VBM15R11S is suited for harsh industrial environments, outdoor applications, and continuous operation scenarios.
Full Mechanical and Electrical Compatibility—Drop-in Replacement without Redesign
The VBM15R11S is packaged in the industry-standard TO-220 format, featuring identical pinout, footprint, and mounting geometry as the STP14NM50N. This complete mechanical and electrical compatibility allows engineers to directly replace the existing component without altering PCB layout, heatsink design, or assembly process. The “plug-and-play” substitution significantly reduces validation time, eliminates redesign risks, and accelerates time-to-market—enabling companies to swiftly transition to a secure, locally sourced supply chain.
Localized Supply Chain and Responsive Technical Support
Unlike imported alternatives subject to unpredictable lead times and logistics delays, VBsemi’s domestic manufacturing capabilities ensure stable, large-scale production of the VBM15R11S. Standard lead times are typically within 2–3 weeks, with expedited support available for urgent needs. Moreover, VBsemi’s local technical team provides prompt, dedicated assistance—offering detailed datasheets, substitution guides, thermal management recommendations, and application-specific circuit support. Any design or integration queries are addressed rapidly, often within 24 hours, ensuring a smooth and risk-free adoption process.
Ideal for Diverse High-Voltage Applications
From industrial SMPS, motor drives, and solar inverters to lighting ballasts, welding equipment, and UPS systems, the VBM15R11S serves as a high-reliability, high-performance domestic alternative to the STP14NM50N. With its balanced electrical parameters, advanced technology, full package compatibility, and dependable local supply, it enables manufacturers to enhance product competitiveness, secure production schedules, and reduce dependency on imported components.
Choosing the VBM15R11S is more than a component substitution—it is a strategic upgrade toward a resilient, efficient, and cost-optimized supply chain, backed by superior local service and performance assurance.