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VBGQA1107: The Premier Domestic SGT MOSFET for High-Efficiency Power Conversion, Directly Replacing MCC MCAC60N10YA-TP
time:2026-02-25
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Driven by the relentless pursuit of higher efficiency and power density in modern power systems, alongside the strategic need for a resilient supply chain, domestic alternatives for core power semiconductors have transitioned from optional to essential. In applications demanding robust performance at 100V, the quest for a reliable, high-performance, and readily available solution is paramount. The MCAC60N10YA-TP from MCC (Micro Commercial Components) has been a common choice, but the VBGQA1107 from VBsemi emerges as a superior alternative, offering not just a pin-to-pin replacement but a significant performance leap enabled by advanced SGT (Shielded Gate Trench) technology, redefining value from "replacement" to "upgrade."
I. Parameter Comparison and Performance Leap: The SGT Technology Advantage
The MCAC60N10YA-TP, with its 100V drain-source voltage, 60A continuous drain current, and 13mΩ on-state resistance (at VGS=4.5V), has served well in various medium-voltage applications. However, evolving efficiency standards and thermal constraints call for lower losses.
1. Building on a compatible 100V VDS rating, the VBGQA1107 achieves a remarkable breakthrough in key figures:
Drastically Reduced On-Resistance: With VGS = 10V, the RDS(on) is as low as 7.4mΩ, representing a reduction of over 43% compared to the reference model's typical rating. According to Pcond = I_D^2 RDS(on), this dramatically lowers conduction losses, especially at high load currents, directly boosting system efficiency and easing thermal management.
Higher Current Handling: The continuous drain current rating is increased to 75A, a 25% improvement, providing greater design margin and robustness for handling current spikes.
Enhanced Switching Performance: The SGT structure inherently offers lower gate charge (Qg) and optimized capacitances (Ciss, Coss, Crss), leading to faster switching speeds, reduced switching losses, and lower drive requirements—key for high-frequency operation.
Robust Gate Reliability: With a VGS rating of ±20V and a standard Vth of 2.5V, it ensures stable and reliable gate control.
II. Deepening Application Scenarios: Enabling Higher Performance Designs
The VBGQA1107 is not just a drop-in replacement but a catalyst for system improvement in existing MCAC60N10YA-TP applications:
1. Synchronous Rectification in DC-DC Converters (e.g., 48V/12V):
The ultra-low RDS(on) minimizes conduction loss in the secondary-side SR MOSFET, maximizing converter efficiency across the entire load range. This is critical for automotive and telecom power systems.
2. Motor Drive and Control (BLDC/PMSM):
The higher current capability and lower losses make it ideal for driving motors in applications like drones, e-bikes, pumps, and fans, enabling more compact and cooler-running drives.
3. Server & Telecom Power Supplies (POL, OR-ing):
Its efficiency gains contribute directly to meeting stringent 80 Plus Titanium-like standards. The fast switching supports higher frequency designs, reducing the size of passive components.
4. Battery Management Systems (BMS) & Protection Circuits:
The low on-resistance minimizes voltage drop and power loss in discharge paths, improving overall battery utilization and system runtime.
III. Beyond Parameters: Reliability, Supply Assurance, and Total Cost Advantage
Choosing the VBGQA1107 is a strategic decision encompassing technical and supply chain benefits:
1. Domestic Supply Chain Security: VBsemi controls the process from design to packaged testing, ensuring stable supply, predictable lead times, and insulation from global market volatility, securing production continuity.
2. Comprehensive Cost Advantage: Offering superior performance at a competitive price point, it reduces the total BOM cost. The potential to downsize heatsinks or magnetics due to higher efficiency adds further system-level cost savings.
3. Localized Technical Support: VBsemi provides rapid, in-depth support from selection and simulation to testing and failure analysis, accelerating customer design cycles and problem resolution.
IV. Adaptation Recommendations and Replacement Path
For designs currently using the MCAC60N10YA-TP, a smooth transition to VBGQA1107 is recommended:
1. Electrical Performance Verification: Evaluate key switching waveforms and loss distribution on the existing board. The lower Qg of the VBGQA1107 may allow for optimization of gate drive circuitry for even better performance.
2. Thermal Design Re-assessment: The significant reduction in conduction loss likely lowers junction temperature. Consider validating thermal performance; it may allow for a simpler heatsink or improved reliability.
3. Reliability and System Validation: Conduct standard electrical, thermal, and environmental stress tests in the lab, followed by system-level and field validation to ensure long-term robustness.
Advancing Towards Smarter, More Efficient Power Solutions
The VBsemi VBGQA1107 is more than a domestic alternative; it is a next-generation SGT MOSFET that sets a new standard for 100V applications. Its dramatic reduction in on-resistance, higher current capability, and excellent switching characteristics empower designers to create more efficient, compact, and reliable power systems.
In an era prioritizing performance and supply chain autonomy, selecting the VBGQA1107 is both a smart engineering upgrade and a strategic supply chain decision. We highly recommend this product and look forward to partnering with you to pioneer the next wave of innovation in power electronics.
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