Introduction
Power MOSFETs serve as the critical switches managing energy flow in high-power applications. For years, international leaders like ROHM have set benchmarks with components such as the R6024KNZ4C13. However, shifts in the global supply landscape and the pursuit of technological self-reliance have made finding robust, high-performance domestic alternatives a strategic imperative. Represented by VBsemi's VBP16R26S, domestic power semiconductors are now achieving direct substitution and even surpassing established international classics.
Part 1: Analysis of the Classic Component
ROHM's R6024KNZ4C13 is an N-channel MOSFET rated for 600V and 24A continuous drain current. It features a typical on-resistance of 165mΩ (measured at 10V, 11.3A), balancing voltage withstand capability with conduction performance. This device is commonly employed in demanding applications such as industrial power supplies, motor drives, and high-power converters, where reliability and efficiency are paramount.
Part 2: Performance Surpassing by the Domestic Challenger
VBsemi's VBP16R26S directly targets the R6024KNZ4C13, offering key enhancements in performance metrics:
Higher Current Capacity: The continuous drain current is rated at 26A, providing a 2A increase over the classic part, enabling support for higher power levels.
Lower Conduction Losses: With a typical on-resistance of 115mΩ @ 10V, the VBP16R26S significantly reduces conduction losses, improving overall system efficiency and thermal performance.
Robust Voltage Ratings: It maintains a 600V drain-source voltage (Vdss) and a ±30V gate-source voltage (VGS), ensuring compatibility and reliability in high-voltage switching environments.
Advanced Technology: The device utilizes a SJ_Multi-EPI (Super Junction Multi-Epitaxial) process, delivering optimized switching performance and ruggedness.
Full Form-Fit Compatibility: Housed in a TO-247 package, it is pin-to-pin compatible, allowing for direct replacement without circuit board modifications.
Part 3: Core Value Beyond Specifications
Selecting this domestic alternative delivers advantages that extend beyond the datasheet:
Supply Chain Resilience: Reduces dependency on a single international source, mitigating supply risks and ensuring production stability.
Cost-Effectiveness: Often provides a more favorable total cost of ownership without sacrificing performance, potentially allowing for system-level cost optimization.
Responsive Local Support: Domestic suppliers can offer faster technical support, customization feedback, and collaborative problem-solving tailored to specific application needs.
Strengthening the Domestic Ecosystem: Each successful adoption contributes to the technical accumulation and iterative advancement of the domestic semiconductor industry, fostering a virtuous cycle of innovation.
Part 4: A Robust Path for Substitution Implementation
To ensure a smooth and reliable transition, the following steps are recommended:
Comprehensive Parameter Review: Meticulously compare all electrical characteristics, including threshold voltage (Vth), capacitance, and switching parameters.
Rigorous Laboratory Validation: Perform static parameter tests, dynamic switching characterization, thermal and efficiency evaluations, and reliability stress testing under simulated operating conditions.
Pilot Batch Verification: Implement the component in actual end-product environments for field testing, monitoring long-term performance and stability.
Develop a Phased Switchover Plan: After successful verification, plan a gradual rollout while temporarily maintaining the original design as a backup to ensure business continuity.
Conclusion: From Direct Replacement to Performance Leadership
The progression from the ROHM R6024KNZ4C13 to VBsemi's VBP16R26S illustrates that domestic power semiconductors have reached a stage where they can not only match but exceed key performance metrics of international benchmarks. Adopting such high-performance domestic components is a pragmatic response to current supply chain dynamics and a strategic investment in building a more autonomous, resilient, and innovative technological foundation for the future. Now is the time to actively evaluate and integrate these capable domestic solutions.