VBP15R50S: The Perfect Domestic Alternative to IXFH16N50P3, A More Reliable Choice for High-Power Applications
In various high-power application scenarios such as switch-mode power supplies, industrial inverters, motor drives, and welding equipment, Littelfuse IXYS's IXFH16N50P3, with its high voltage rating and robust performance, has been a key component for engineers worldwide. However, in the post-pandemic era, this imported component faces challenges like unstable lead times (often extending to several months), procurement costs affected by exchange rate fluctuations, and slow technical support responses. These issues severely impact production schedules and cost control for downstream companies. Therefore, domestic substitution has become a necessity, crucial for ensuring supply chain security, reducing costs, and enhancing competitiveness.
VBsemi, with years of expertise in power semiconductors, introduces the VBP15R50S N-channel power MOSFET based on its independent R&D. This product directly对标es the IXFH16N50P3, offering superior parameters, technological parity, and full package compatibility. It can serve as a drop-in replacement without circuit modifications, providing a more stable, cost-effective, and locally supported solution for high-power electronic systems.
Comprehensive Parameter Surpassing, Ample Performance Redundancy, Adapting to More Demanding Conditions.
Tailored as a domestic alternative to the IXFH16N50P3, the VBP15R50S achieves significant improvements in key electrical parameters:
Firstly, the drain-source voltage remains at 500V, matching the original model, but the continuous drain current is increased to 50A, a remarkable 212.5% improvement over the original 16A. This massive enhancement in current-carrying capability allows for handling much higher power levels, enabling upgrades to higher-power designs or improving system stability at existing power levels.
Secondly, the on-state resistance is drastically reduced to 80mΩ (@10V gate drive), compared to the IXFH16N50P3's 360mΩ—a 77.8% reduction. This significantly lowers conduction losses, improving overall efficiency and reducing heat generation, which eases cooling system design and lowers energy costs.
Additionally, the VBP15R50S supports a ±30V gate-source voltage, offering strong gate ESD and noise immunity. The 3.8V gate threshold voltage balances driving convenience and switching reliability, compatible with mainstream driver ICs without circuit adjustments.
Enhanced with Advanced SJ_Multi-EPI Technology, Reliability and Stability Inherited and Upgraded.
The IXFH16N50P3 relies on advanced MOSFET technology for performance. The VBP15R50S employs state-of-the-art Super Junction Multi-EPI (SJ_Multi-EPI) technology, which optimizes device structure for low on-resistance and high switching speed. This technology ensures excellent dv/dt tolerance and reduces switching losses, making it ideal for high-frequency applications. The device undergoes rigorous avalanche testing and high-voltage screening, providing high single-pulse avalanche energy capability, reducing the risk of damage from voltage spikes. With an operating temperature range of -55°C to 150°C and passing 1000-hour high-temperature/high-humidity aging tests, the VBP15R50S offers exceptional reliability for harsh environments, suitable for critical fields like industrial control, renewable energy, and automotive systems.
Fully Compatible Package, Enabling "Virtually Cost-Free, Risk-Free, and Immediate" Replacement.
The VBP15R50S uses a TO-247 package, which is fully compatible with the IXFH16N50P3's TO-247 package in pinout, dimensions, and heatsink structure. Engineers can directly replace the component without modifying PCB layout or thermal design, achieving "plug-and-play" convenience. This compatibility reduces verification time to 1-2 days, avoids PCB redesign costs, and eliminates the need for re-certification, accelerating the substitution process.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Compared to the volatile supply chain of imported components, VBsemi leverages China's robust semiconductor industry, with modern production bases in Jiangsu and Guangdong, ensuring stable mass production of the VBP15R50S. Lead times are compressed to within 2 weeks, with emergency orders enabling 72-hour fast delivery, mitigating risks from international logistics and trade policies. As a local brand, VBsemi provides "one-on-one" technical support, offering comprehensive documentation, substitution verification reports, and rapid response within 24 hours for any issues, ensuring a smooth and worry-free substitution experience.
From industrial motor drives and high-power inverters to renewable energy systems and electric vehicle charging, the VBP15R50S, with its core advantages of "superior current capability, lower on-resistance, package compatibility, controllable supply, and attentive service," has become the preferred domestic alternative to the IXFH16N50P3. It has been successfully adopted by leading companies across industries, receiving high market recognition. Choosing the VBP15R50S is not just a component replacement; it is a strategic move to enhance supply chain security, optimize costs, and boost product competitiveness—without R&D risks, while enjoying better performance, stable supply, and responsive support.