In a wide range of low-voltage, high-current application scenarios such as DC-DC converters, motor drives, battery management systems, and power tools, ROHM's RQ3E100MNTB1 N-channel MOSFET has been a popular choice for engineers due to its compact DFN package and balanced performance. However, in the context of global supply chain uncertainties and increasing cost pressures, reliance on imported components often brings challenges like extended lead times, volatile pricing, and limited local technical support. This has accelerated the shift toward domestic alternatives, transforming them from a contingency plan into a strategic necessity for ensuring supply chain resilience, optimizing costs, and enhancing product competitiveness.
Leveraging its extensive expertise in power semiconductor design and manufacturing, VBsemi introduces the VBQF1310 N-channel power MOSFET. This product is meticulously engineered as a direct, pin-to-pin compatible alternative to the RQ3E100MNTB1, delivering significant performance enhancements, technological reliability, and seamless substitution without requiring circuit modifications—offering a more robust, cost-effective, and locally supported solution for demanding power management applications.
Performance Upgrades and Enhanced Capabilities for Demanding Applications
Designed as a high-performance domestic replacement for the RQ3E100MNTB1, the VBQF1310 achieves notable improvements in key electrical parameters, providing greater design margin and efficiency:
The drain-source voltage (VDS) is rated at 30V, matching the original part, ensuring reliable operation in standard low-voltage environments. More importantly, the continuous drain current (ID) is dramatically increased to 30A, triple the original 10A—a 200% enhancement in current-handling capability. This substantial upgrade allows the VBQF1310 to effortlessly support higher-power applications, significantly improve system robustness at similar power levels, and reduce thermal stress.
The on-state resistance (RDS(on)) is specified at 13mΩ (at VGS=10V), comparable to the RQ3E100MNTB1’s 12.3mΩ, ensuring low conduction losses and high efficiency. The device also features a low gate threshold voltage (Vth) of 1.7V, enabling easy driving compatibility with modern low-voltage controller ICs. With a gate-source voltage (VGS) rating of ±20V, it offers strong protection against gate-side electrical overstress and noise, enhancing reliability in electrically noisy environments.
Advanced Trench Technology for High Reliability and Switching Performance
The VBQF1310 utilizes advanced Trench MOSFET technology, which optimizes cell density and charge balance to achieve low on-resistance and excellent switching characteristics. This technology ensures minimal switching losses and high efficiency in high-frequency applications such as synchronous rectification and PWM motor control. The device is subjected to rigorous production testing and quality screening, ensuring high reliability and consistency. Its robust design supports stable operation across a wide temperature range, making it suitable for industrial, automotive, and consumer applications where durability is critical.
Full Package and Footprint Compatibility for Effortless Replacement
A major concern in component substitution is the engineering effort required for redesign and validation. The VBQF1310 eliminates this hurdle through complete package compatibility. It is offered in the industry-standard DFN8 (3x3) package, with identical pinout, dimensions, and thermal pad layout as the RQ3E100MNTB1. Engineers can directly replace the existing component on the PCB without any layout changes, thermal redesign, or mechanical adjustments. This plug-and-play compatibility drastically reduces substitution time, validation costs, and risk—allowing product teams to qualify the alternative quickly and transition seamlessly in production.
Local Supply Chain Assurance and Responsive Technical Support
Unlike imported components facing logistical delays and geopolitical trade uncertainties, VBsemi's VBQF1310 benefits from a localized and stable supply chain. With manufacturing and R&D facilities within China, VBsemi guarantees shorter lead times, typically within 2–4 weeks, and can support expedited deliveries for urgent needs. This reliability helps customers avoid production disruptions and manage inventory more effectively.
Moreover, as a domestic supplier, VBsemi provides dedicated, responsive technical support. Customers receive comprehensive documentation including datasheets, application notes, and substitution guides. The technical team offers prompt assistance—often within 24 hours—for design-in queries, validation support, and troubleshooting, ensuring a smooth and confident transition from the ROHM part to the VBQF1310.
From DC-DC power modules and motor drives to battery protection circuits and portable devices, the VBQF1310 stands out as a superior alternative to the RQ3E100MNTB1. With its higher current capability, competitive on-resistance, full compatibility, and dependable local supply, it enables customers to enhance performance, secure their supply chain, and reduce total cost of ownership. Choosing the VBQF1310 is more than a component swap—it’s a strategic upgrade toward greater design freedom, reliability, and competitive advantage.