In high-voltage auxiliary power supplies and other demanding power conversion scenarios, Navitas' G2R1000MT17D, leveraging its advanced G2R technology and LoKing packaging, has been a recognized choice for its robust 1.7kV rating and stable RDS(ON) over temperature. However, in the current climate of global supply chain volatility and extended lead times for imported semiconductors, dependence on this component presents challenges: procurement uncertainties, cost vulnerabilities, and limited local technical support. This situation drives the urgent need for a reliable, high-performance domestic alternative that ensures supply chain resilience and cost efficiency without compromising on quality.
VBsemi, drawing on its expertise in wide-bandgap semiconductors, introduces the VBP117MC06, a Silicon Carbide (SiC) N-channel MOSFET meticulously engineered as a direct, pin-to-pin replacement for the G2R1000MT17D. This solution delivers not only full package compatibility but also parameter enhancements and the inherent advantages of SiC technology, offering a more stable, efficient, and accessible option for upgrading high-voltage power systems.
Performance Enhancements and SiC Advantages for Demanding Operations
Tailored as a drop-in replacement, the VBP117MC06 elevates key parameters and introduces superior material characteristics:
It maintains the high 1700V drain-source voltage rating, ensuring reliability in rigorous 1.7kV applications. A significant advantage lies in its lower gate threshold voltage range of 2V to 4V, compared to the original 4.5V. This feature simplifies gate drive design, enhances switching robustness, and improves compatibility with a wider range of controller ICs, reducing the risk of unintended turn-on in noisy environments.
The device boasts a low on-state resistance of 1500mΩ (measured at VGS=18V), ensuring low conduction losses. More importantly, as a SiC MOSFET, the VBP117MC06 offers fundamental benefits over traditional silicon-based counterparts: vastly superior switching performance with significantly reduced switching losses, excellent high-temperature operation capability, and inherently faster body diode reverse recovery. This translates to higher system efficiency, increased power density, and reduced thermal management demands—critical for auxiliary power supplies targeting peak performance.
Advanced SiC Technology for Enhanced Reliability and Efficiency
While the G2R1000MT17D utilizes specialized G2R technology for stable on-resistance, the VBP117MC06 is built on mature, planar SiC MOSFET technology. This platform provides exceptional durability and switching characteristics. The SiC material's wide bandgap grants the device superior thermal conductivity and high-temperature stability, reliably operating across an extended temperature range. Its optimized internal capacitance ensures clean and fast switching transitions, minimizing electromagnetic interference (EMI) and stress on surrounding components. The VBP117MC06 undergoes rigorous screening and reliability testing, including high-temperature reverse bias (HTRB) and high-temperature gate bias (HTGB) tests, guaranteeing long-term stability in harsh operating conditions common in industrial auxiliary power units.
Seamless TO-247 Package Compatibility for Zero-Risk Replacement
A primary concern in component substitution is redesign effort. The VBP117MC06 eliminates this hurdle through full mechanical and footprint compatibility. Housed in the standard TO-247 package, it matches the G2R1000MT17D exactly in pinout, dimensions, and mounting hole layout. Engineers can directly replace the existing component on the PCB without any modification to the board layout, heatsink design, or mechanical assembly. This "plug-and-play" approach drastically reduces validation time and cost, allowing for rapid prototyping and production切换, typically within days. It preserves all original certifications and industrial designs, enabling a swift and risk-free transition to a domestic, high-performance SiC solution.
Local Supply Chain Assurance and Responsive Technical Support
Contrasting with the unpredictable lead times of imported parts, VBsemi's domestic manufacturing ensures a stable and agile supply for the VBP117MC06. With streamlined production and logistics within China, lead times are consistently short, and rapid delivery options are available, shielding customers from international trade disruptions and currency fluctuations.
Furthermore, VBsemi provides dedicated, local technical support. Customers receive comprehensive documentation, including substitution guides, detailed datasheets, SPICE models, and application notes. The technical team offers prompt, in-depth assistance for circuit optimization, driving considerations specific to SiC MOSFETs, and any integration challenges, ensuring a smooth and successful replacement process.
From auxiliary power supplies in industrial systems to high-voltage converters in renewable energy and specialty power modules, the VBP117MC06 stands as the ideal domestic successor to the Navitas G2R1000MT17D. Its combination of enhanced electrical parameters, the systemic benefits of SiC technology, perfect package compatibility, a secured supply chain, and localized support provides a compelling upgrade path. Choosing the VBP117MC06 is a strategic move beyond simple substitution—it is an upgrade towards higher efficiency, greater supply chain control, and reduced total cost of ownership, requiring no design risks while unlocking the performance advantages of next-generation SiC technology.