In demanding high-voltage and high-frequency applications such as automotive systems, switch-mode power supplies, and other power conversion scenarios, ROHM's SCT2080KEHRC11 Silicon Carbide (SiC) MOSFET has been valued for its low on-resistance, fast switching speed, and ease of paralleling. However, navigating global supply chain uncertainties and seeking enhanced performance often presents challenges for designers. The shift towards domestic alternatives has become a strategic imperative for ensuring supply resilience, optimizing costs, and accessing responsive support.
Leveraging its deep expertise in advanced power semiconductors, VBsemi introduces the VBP112MC30, a state-of-the-art SiC MOSFET engineered as a direct, performance-enhanced replacement for the SCT2080KEHRC11. This device delivers significant parameter improvements, advanced SiC technology, and full package compatibility, enabling a seamless upgrade path for next-generation high-voltage electronic systems without circuit redesign.
Performance Superiority and Enhanced Robustness for Demanding Environments
Designed as a drop-in replacement, the VBP112MC30 surpasses the SCT2080KEHRC11 in key specifications, providing greater headroom and reliability:
Voltage & Current Handling: It maintains the same 1200V drain-source voltage (Vdss) while dramatically increasing the continuous drain current (Id) to 80A, doubling the current-carrying capacity compared to the original 40A. This enables support for higher power levels and improves operational stability and margins.
Reduced Conduction Losses: The on-state resistance (RDS(on)) is significantly lowered to 80mΩ (typical @ Vgs=18V), a marked improvement over the 117mΩ of the SCT2080KEHRC11. This reduction directly translates to higher system efficiency and lower power dissipation.
Optimized Gate Drive: With a gate-source voltage (Vgs) range of -10V to +22V and a standard gate threshold voltage (Vth) of 2-4V, it offers robust noise immunity, prevents spurious turn-on, and ensures compatibility with common gate driver ICs, simplifying the driving scheme.
Advanced SiC Technology for Fast Switching and High Reliability
The VBP112MC30 utilizes VBsemi's mature SiC-S (Silicon Carbide) MOSFET technology. This platform inherits the desired features of fast switching speed and excellent reverse recovery characteristics while delivering superior performance:
The inherent material advantages of SiC, combined with an optimized design, result in exceptionally fast switching, reducing switching losses significantly in high-frequency applications.
It offers excellent dv/dt and di/dt capability, enhancing system robustness against voltage and current transients.
The device is characterized by high-temperature operation capability and exceptional long-term reliability, making it suitable for harsh environments like automotive and industrial settings.
Seamless Drop-In Replacement with TO-247 Package
The VBP112MC30 is housed in a standard TO-247 package, ensuring full mechanical and footprint compatibility with the SCT2080KEHRC11. This "plug-and-play" compatibility allows engineers to replace the component directly on the existing PCB layout without modifying the circuit board, heatsink, or mechanical design. This eliminates redesign costs, accelerates verification cycles, and enables a rapid, risk-free transition to a superior domestic solution.
Domestic Supply Chain Assurance and Expert Technical Support
Choosing VBP112MC30 mitigates risks associated with international logistics and supply volatility. VBsemi's local manufacturing and streamlined logistics ensure stable supply and shorter lead times. Furthermore, VBsemi provides comprehensive local technical support, including detailed datasheets, application notes, and expert assistance, ensuring a smooth integration process and prompt resolution of any design queries.
From automotive powertrains and onboard chargers to high-power server SMPS, industrial motor drives, and renewable energy systems, the VBP112MC30 stands out as the ideal domestic alternative to the ROHM SCT2080KEHRC11. Its combination of higher current rating, lower on-resistance, advanced SiC technology, complete package compatibility, and secure local supply offers a compelling value proposition. Adopting the VBP112MC30 is a strategic step towards building more efficient, reliable, and supply-chain-resilient products.