Amid the global trends of energy efficiency enhancement and supply chain diversification, the domestic substitution of core power semiconductors is accelerating from a contingency plan to a strategic necessity. For medium-voltage applications demanding robust performance and reliability, identifying a local alternative that combines competitive performance, assured quality, and stable supply is a key objective for designers and manufacturers. Focusing on the industry-established 600V N-channel MOSFET from ROHM—the R6024KNXC7G—the VBMB16R20S from VBsemi presents itself as a compelling and superior replacement. It not only achieves seamless compatibility but also delivers enhanced performance through advanced multi-epitaxial SJ (Super Junction) technology, marking a transition from "direct replacement" to "performance upgrade."
I. Parameter Comparison and Performance Enhancement: Advantages of Multi-EPI SJ Technology
The R6024KNXC7G has been widely adopted in various power conversion stages due to its 600V voltage rating, 24A continuous drain current, and 165mΩ on-state resistance. However, the pursuit of higher efficiency and power density continuously pushes the boundaries for lower conduction losses.
1. Reduced Conduction Losses: While maintaining hardware compatibility with the same 600V drain-source voltage and a similar TO-220F package footprint, the VBMB16R20S features a lower typical RDS(on) of 150mΩ (max) at VGS=10V, compared to the 165mΩ of the reference model. This approximately 9% reduction in on-resistance directly translates to lower conduction losses (Pcond = I_D² RDS(on)), improving system efficiency and thermal performance, particularly at typical operating currents.
2. Balanced Performance Profile: The VBMB16R20S offers a continuous drain current rating of 20A. In many application scenarios where significant design margin is applied, this current rating remains fully adequate, while the benefit of significantly lower RDS(on) provides a net positive impact on overall system losses and thermal design.
3. Robust Gate Characteristics: With a gate-source voltage (VGS) rating of ±30V and a standard threshold voltage (Vth), the device ensures robust and compatible drive requirements, facilitating easy integration into existing designs.
II. Application Scenarios: Seamless Replacement and System Benefit
The VBMB16R20S enables a direct, pin-to-pin replacement in most applications currently using the R6024KNXC7G, while its improved characteristics can contribute to system-level enhancements:
1. Switch Mode Power Supplies (SMPS): In PFC (Power Factor Correction) stages, offline converters, and server power supplies, the lower RDS(on) helps improve efficiency targets, especially at high-line input voltages and medium load conditions.
2. Motor Drives & Inverters: Suitable for auxiliary motor drives, fan controllers, and small to mid-power inverter systems (e.g., in appliances, pumps, industrial controls), where lower conduction loss improves thermal management and reliability.
3. Lighting Solutions: In high-performance LED driving circuits and electronic ballasts, the combination of 600V rating and reduced losses supports more compact and efficient designs.
4. Industrial and Renewable Energy Systems: Applicable in auxiliary power supplies for solar microinverters, energy storage systems, and UPS, contributing to higher overall system efficiency.
III. Beyond Specifications: Reliability, Supply Chain, and Total Value
Choosing the VBMB16R20S represents a comprehensive decision encompassing technical performance and strategic supply chain considerations:
1. Secured Domestic Supply Chain: VBsemi controls the vertical integration from chip design and fabrication to packaging and testing, ensuring supply stability, predictable lead times, and mitigation of geopolitical or trade-related supply chain disruptions.
2. Cost-Effectiveness: Offering comparable or superior electrical parameters, the VBMB16R20S provides a cost-competitive alternative without compromising quality, helping reduce the overall BOM cost and enhance end-product market competitiveness.
3. Localized Technical Support: Customers benefit from responsive, in-region technical support throughout the design cycle—from component selection and simulation to validation and troubleshooting—accelerating development and problem resolution.
IV. Replacement Guidance and Implementation Path
For designs currently utilizing or specifying the R6024KNXC7G, the following steps are recommended for a smooth transition:
1. Electrical Performance Validation: Conduct a comparative bench test under typical application conditions. Verify key waveforms (switching behavior, loss analysis) and confirm that the system operates within safe margins with the VBMB16R20S's parameters. The lower gate charge typical of SJ technology may allow for drive optimization.
2. Thermal Design Re-assessment: Due to the lower conduction losses, thermal stress on the device may be reduced. Re-evaluate heat sink requirements; potential exists for optimizing thermal management for cost or space savings.
3. Reliability and System Validation: Perform necessary electrical, thermal, and environmental stress tests in the lab before proceeding to field or end-product validation to ensure long-term reliability and performance.
Advancing Towards Efficient and Autonomous Power Design
The VBsemi VBMB16R20S is more than a simple domestic substitute for the ROHM R6024KNXC7G; it is a high-reliability, performance-enhanced MOSFET solution for 600V applications. Its advantages in lower conduction loss and robust construction can help customers achieve improvements in system efficiency, thermal performance, and supply chain resilience.
In the current landscape prioritizing efficiency and supply chain autonomy, selecting the VBMB16R20S is both a smart technical choice for performance upgrade and a strategic decision for supply chain security. We confidently recommend this product and look forward to partnering with you to empower your next-generation power designs.