In modern power management applications such as automotive systems, DC-DC converters, motor drives, and battery protection circuits, Nexperia's BUK9Y7R2-60E,115 N-channel MOSFET, known for its low on-resistance and high current handling in a compact LFPAK56 package, has been a preferred choice for designers seeking efficiency and power density. However, navigating the complexities of the global semiconductor supply chain—extended lead times, allocation constraints, and vulnerability to trade policy shifts—has introduced significant uncertainty and cost pressure for manufacturers. This environment has transformed the quest for a reliable, high-performance domestic alternative from a strategic consideration into an urgent operational imperative.
Responding to this critical industry need, VBsemi leverages its focused expertise in power semiconductor development to introduce the VBED1606. This Single N-channel MOSFET is engineered as a robust and pin-to-pin compatible alternative to the BUK9Y7R2-60E,115. It delivers a compelling blend of parameter matching, advanced trench technology, and full package compatibility, enabling a seamless, drop-in replacement that eliminates redesign efforts while offering the security and support of a local supply chain.
Precision-Engineered Parameters for Demanding Applications, Offering a Balanced Performance Profile
Designed as a direct functional alternative, the VBED1606 provides a carefully optimized electrical specification that meets or exceeds the requirements of the target application spaces:
- It maintains the same 60V drain-source voltage (Vdss), ensuring full compatibility in standard 12V/24V/48V bus systems commonly found in automotive and industrial settings.
- The continuous drain current (Id) is rated at a robust 64A. This substantial current capability is sufficient to cover a vast majority of high-current applications targeted by the original part, providing strong performance headroom for power stages in converters and motor controllers.
- A key strength is its low on-state resistance. With RDS(on) as low as 6.2mΩ (measured at VGS=10V), the VBED1606 achieves remarkably low conduction losses. While the specific test conditions may differ from the original part, this low resistance directly translates into higher system efficiency, reduced heat generation, and the potential for simpler thermal management or increased power density.
- The device supports a gate-source voltage (VGS) range of ±20V, enhancing robustness against voltage spikes and noise in demanding electrical environments. The gate threshold voltage (Vth) range of 1V to 3V ensures reliable switching and compatibility with a wide array of standard gate driver ICs.
Advanced Trench Technology for Superior Switching and Ruggedness
The VBED1606 is built using VBsemi's advanced Trench MOSFET technology. This process is optimized to deliver the low RDS(on) and excellent switching performance required for high-frequency operation. The technology minimizes gate charge and intrinsic capacitances, leading to reduced switching losses and enabling efficient operation in modern, high-frequency switch-mode power supplies and PWM-driven circuits. Furthermore, devices undergo rigorous reliability testing, including high-temperature and operational life tests, ensuring stable long-term performance even under the demanding conditions typical of automotive and industrial environments. The wide operating temperature range guarantees functionality across various application scenarios.
Seamless Drop-In Replacement with LFPAK56 Package Compatibility
A primary advantage of the VBED1606 is its complete mechanical and footprint compatibility. It is offered in the industry-standard LFPAK56 (Power-SO8) package, matching the BUK9Y7R2-60E,115 in pinout, dimensions, and pad layout. This allows engineers to replace the component on existing PCB designs without any modification to the board layout, solder paste stencil, or assembly process. This "plug-and-play" substitution drastically reduces the time, cost, and risk associated with component qualification and design revision, enabling a swift and effortless transition to a secure supply source.
Local Supply Chain Assurance and Responsive Technical Support
Choosing VBED1606 means moving beyond supply chain uncertainty. VBsemi's domestic manufacturing and vertically integrated control over production ensure stable, predictable supply with significantly shorter lead times compared to imported alternatives. This mitigates risks related to geopolitical factors, logistics disruptions, and currency volatility. Complementing this supply security, VBsemi provides dedicated, local technical support. Engineers have direct access to comprehensive documentation, including detailed datasheets, application notes, and SPICE models, as well as prompt assistance for design-in queries and validation support, ensuring a smooth and successful integration process.
From automotive auxiliary drives and BLDC motor control to synchronous rectification in server power supplies and high-current load switches, the VBED1606 stands as a reliable, high-performance domestic alternative to the Nexperia BUK9Y7R2-60E,115. It combines essential electrical performance, full package compatibility, and the undeniable advantages of a secure local supply chain with responsive support. Adopting the VBED1606 is a strategic step toward de-risking production, optimizing costs, and enhancing the overall competitiveness of your power electronic designs.