In critical power conversion applications such as high-efficiency DC-DC converters and switching regulators, TOSHIBA's TPH3300CNH,L1Q(M, with its fast-switching capability, low gate charge, and low on-resistance, has been a reliable choice for design engineers. However, navigating global supply chain uncertainties and managing procurement lead times pose ongoing challenges. This underscores the growing necessity for a high-performance, readily available domestic alternative to ensure design stability and cost efficiency.
VBsemi addresses this need with the VBQA1152N N-channel MOSFET, a product of independent R&D designed as a direct, pin-to-pin replacement for the TPH3300CNH,L1Q(M. It offers significant parametric advantages, robust performance, and full compatibility, enabling a seamless upgrade path for your power systems without circuit redesign.
Performance Superiority: Enhanced Parameters for Demanding Designs
The VBQA1152N is engineered to surpass the key specifications of the TPH3300CNH,L1Q(M, providing greater margin and reliability:
Drain-Source Voltage (VDS): Matched at 150V, ensuring suitability for the same application voltage domains.
Continuous Drain Current (ID): Dramatically increased to 53.7A, far exceeding the original's 18A. This nearly 200% higher current rating empowers designs to handle significantly higher power levels or operate with greater safety margin at existing loads.
On-State Resistance (RDS(on)): Reduced to an exceptional 15.8 mΩ (at VGS=10V), compared to 33 mΩ for the TOSHIBA part. This over 50% reduction in conduction loss directly translates to higher system efficiency, lower heat generation, and potential for cooler operation or simplified thermal management.
Gate-Source Voltage (VGS): Rated at ±20V, offering robust gate protection.
Gate Threshold Voltage (Vth): A standard 3V, ensuring easy drive compatibility with common controller ICs.
Advanced Trench Technology for Fast and Reliable Switching
While the TPH3300CNH,L1Q(M emphasizes fast switching, the VBQA1152N leverages advanced Trench technology to achieve its ultra-low RDS(on) and excellent switching characteristics. This technology ensures low gate charge and capacitance, facilitating high-frequency operation essential for modern DC-DC converters and regulators. The device is built for high reliability under demanding switching conditions, making it an ideal fit for applications requiring both efficiency and robustness.
Seamless Replacement with DFN8(5x6) Package
The VBQA1152N comes in a DFN8(5x6) package, designed for full compatibility with the footprint of the original component. This allows for a true "drop-in" replacement, eliminating the need for PCB layout changes, thermal redesign, or mechanical adjustments. Engineers can validate and integrate the VBQA1152N rapidly, minimizing time-to-market and reducing substitution risks and costs to virtually zero.
Guaranteed by Local Strength: Stable Supply and Expert Support
Choosing VBQA1152N means moving beyond supply chain vulnerabilities. Backed by VBsemi's local manufacturing and streamlined logistics, stable supply with short lead times is guaranteed. Furthermore, access to responsive, local technical support provides tailored assistance for replacement validation and application optimization, ensuring a smooth and successful transition.
From high-current DC-DC converters and switching regulators to various power management solutions, the VBQA1152N stands out as the intelligent alternative to the TPH3300CNH,L1Q(M. It combines superior electrical performance, package compatibility, and the security of a local supply chain. Opting for the VBQA1152N is a strategic step toward enhancing product performance, securing your supply line, and gaining a competitive edge—all without assuming redesign risk.