In high-voltage, high-frequency application scenarios such as switch-mode power supplies, industrial inverters, LED lighting drivers, welding machines, and UPS systems, ROHM's R6008ANX, with its robust performance and reliability, has been a preferred choice for engineers globally. However, in the post-pandemic era of supply chain disruptions and international trade frictions, this imported component faces challenges: unstable lead times (often extending to months), procurement costs vulnerable to exchange rate fluctuations, and delayed technical support. These issues constrain production schedules and cost control for downstream enterprises, making domestic substitution not just an option but a necessity for enhancing supply chain security and core competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBMB165R12 N-channel power MOSFET through independent R&D. This product is precisely tailored as a direct alternative to the R6008ANX, offering parameter upgrades, technological parity, and full package compatibility. It enables seamless replacement without circuit modifications, delivering a more stable, cost-effective, and locally attuned solution for high-voltage electronic systems.
Comprehensive Parameter Surpassing, Ample Performance Redundancy, Adapting to More Demanding Conditions.
Designed as a domestic drop-in replacement for the R6008ANX, the VBMB165R12 achieves leapfrog improvements in key electrical parameters, ensuring robust performance for high-voltage applications:
First, the drain-source voltage is increased to 650V, 50V higher than the original model's 600V—an 8.3% enhancement. This provides a greater safety margin in industrial environments with grid fluctuations and transient overvoltage risks, preventing device breakdown.
Second, the continuous drain current is boosted to 12A, significantly surpassing the original model's 8A—a 50% increase in current-carrying capacity. This supports higher-power circuit designs and enhances system stability.
Third, the on-state resistance is reduced to 680mΩ (@10V gate drive), lower than the R6008ANX's 800mΩ (@10V, 4A). This minimizes conduction losses, improves efficiency, and reduces heat generation in high-frequency switching applications.
Additionally, the VBMB165R12 supports a ±30V gate-source voltage, offering stronger gate ESD and noise immunity. The 3.5V gate threshold voltage balances drive convenience and switching reliability, matching mainstream driver ICs without circuit adjustments.
Enhanced with Advanced Planar Gate Technology, Reliability and Stability Inherited and Upgraded.
The VBMB165R12 employs industry-leading Planar gate technology, optimizing device reliability and switching characteristics. It undergoes 100% avalanche testing and high-voltage screening, excelling in single-pulse avalanche energy handling to mitigate damage risks from energy surges. Through optimized intrinsic capacitance design, it reduces switching losses and enhances dv/dt tolerance, ensuring stable operation under high-frequency switching and fast transients. With an operating temperature range of -55°C to 150°C, it adapts to harsh conditions like industrial high-temperature environments. Having passed 1000-hour high-temperature/high-humidity (85°C/85% RH) aging tests and long-term reliability verification, its failure rate is below industry averages, ideal for critical applications such as medical equipment, industrial control, and emergency power supplies.
Fully Compatible Package, Enabling "Virtually Cost-Free, Risk-Free, and Immediate" Replacement.
The VBMB165R12 addresses substitution pain points through package design. It uses a TO-220F package, identical to the R6008ANX in pinout, pin spacing, dimensions, and heatsink structure. Engineers can achieve "plug-and-play" replacement without PCB layout changes or thermal system redesign. This compatibility reduces verification time—sample validation typically completes in 1-2 days—and avoids costs from PCB revisions or mold adjustments. It ensures unchanged product dimensions, eliminating re-certification needs and shortening supply cycles for quick market deployment.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Compared to imported components with unstable supply chains, VBsemi leverages China's semiconductor industry chain, with production bases in Jiangsu and Guangdong enabling full-process R&D and stable mass production. The VBMB165R12 standard lead time is under 2 weeks, with emergency orders allowing 72-hour delivery, mitigating risks from supply chain volatility, tariffs, or geopolitics. As a local brand, VBsemi provides "one-on-one" technical support, including comprehensive documentation (substitution reports, datasheets, thermal guides, application circuits) and tailored solutions based on customer scenarios. Technical issues receive responses within 24 hours, resolving pain points of slow support and high communication costs.
From industrial switch-mode power supplies and high-frequency inverters to LED drivers, welding machines, UPS systems, and motor control, the VBMB165R12—with its core advantages of superior parameters, stable performance, package compatibility, controllable supply, and attentive service—has become the preferred domestic alternative to the R6008ANX. It has gained market recognition through applications in leading companies. Choosing the VBMB165R12 is not just a component replacement; it is a strategic step for upgrading supply chain security, optimizing costs, and enhancing competitiveness—requiring no R&D modification risks while delivering better performance, stable supply, and convenient support.