In various compact, high-efficiency power management and switching applications such as portable devices, battery management systems, load switches, and DC-DC converters, ROHM's UT6MA2TCR, featuring a dual N+P channel configuration, low on-resistance, and a small surface-mount package, has been a popular choice for engineers seeking space-saving solutions. However, in the current landscape of global supply chain uncertainties and extended lead times for many imported components, relying solely on such parts can introduce risks to production continuity and cost predictability. These challenges underscore the growing necessity for reliable, locally-sourced alternatives that ensure both supply chain security and performance parity or enhancement.
Responding to this critical industry need, VBsemi leverages its dedicated expertise in power semiconductor design to introduce the VBQG5325, a dual N+P channel MOSFET developed through independent R&D. This product is meticulously engineered as a direct, pin-to-pin compatible alternative to the UT6MA2TCR, offering significant parameter advancements, technological robustness, and seamless replacement capability. It provides a more reliable, cost-effective, and readily available solution for modern electronic systems demanding high efficiency in minimal space.
Comprehensive Performance Enhancement, Delivering Greater Power and Efficiency.
Designed as a superior domestic replacement for the UT6MA2TCR, the VBQG5325 demonstrates substantial improvements across key electrical specifications, providing enhanced performance headroom and design flexibility:
The device maintains a symmetrical drain-source voltage rating of ±30V, matching the application requirements of the original part. Crucially, the continuous drain current is boosted to ±7A, a 75% increase over the UT6MA2TCR's 4A rating. This significant upgrade in current-carrying capability allows for handling higher power loads or improving thermal margins and long-term reliability in existing designs.
A standout advantage lies in its exceptionally low on-resistance. The VBQG5325 achieves remarkably low RDS(on) values of 18mΩ (N-channel) and 32mΩ (P-channel) at a 10V gate drive. These figures represent a substantial reduction compared to the typical RDS(on) of the UT6MA2TCR (70mΩ and 46mΩ respectively at 10V, 4A), directly translating to lower conduction losses, improved energy efficiency, and reduced heat generation. The gate threshold voltage (Vth) is optimized at 1.6 - 1.7V, ensuring reliable switching and compatibility with standard low-voltage drive circuits. Furthermore, the supported gate-source voltage (VGS) of ±20V offers robust protection against gate overstress and enhances noise immunity in demanding environments.
Advanced Trench Technology for High Reliability and Thermal Performance.
The VBQG5325 utilizes advanced Trench MOSFET technology, which is key to achieving its low on-resistance and excellent switching characteristics. This technology ensures efficient operation and high reliability, comparable to and exceeding the benchmarks set by imported counterparts. The device is engineered for stable performance across an extended operating temperature range, suitable for a wide variety of commercial and industrial applications. Rigorous quality control and reliability testing, including comprehensive electrical parameter screening, ensure consistent performance and a low failure rate, providing confidence for mission-critical designs.
Fully Compatible DFN Package, Enabling Direct Drop-In Replacement.
A primary concern in component substitution is the engineering effort required for redesign and validation. The VBQG5325 eliminates this hurdle through its package design. It is offered in a DFN6(2x2)-B package, which is fully compatible with the footprint and pinout of the UT6MA2TCR. This complete mechanical and electrical compatibility allows engineers to replace the part on existing PCB layouts without any modification to the board design, thermal management, or assembly process. This "drop-in" replacement capability drastically reduces the time, cost, and risk associated with component substitution, enabling a swift and seamless transition to a domestic supply. Verification and sample testing can be completed in minimal time, accelerating time-to-market for end products.
Local Supply Chain Assurance with Responsive Technical Support.
Beyond technical specifications, the VBQG5325 offers the strategic advantage of a secure and responsive supply chain. Manufactured domestically by VBsemi, it is insulated from the volatility of international logistics, trade policies, and extended lead times often associated with imported components. Stable production and shorter, predictable delivery cycles (typically within weeks) provide peace of mind for production planning and inventory management.
As a local supplier, VBsemi adds significant value through accessible and responsive technical support. Customers have direct access to a professional engineering team that provides comprehensive documentation, including detailed datasheets, application notes, and substitution guidance. For any technical queries or application challenges, rapid and practical support is available, ensuring a smooth and successful integration process.
From power switches in portable electronics to motor drives in compact modules, and from battery protection circuits to space-constrained DC-DC converters, the VBQG5325 stands out as the ideal domestic alternative to the ROHM UT6MA2TCR. Its compelling advantages of higher current rating, significantly lower on-resistance, perfect package compatibility, secure supply, and local support make it a strategic choice for designers aiming to enhance performance while fortifying their supply chain. Choosing the VBQG5325 is more than a component swap; it is a step towards greater design resilience, efficiency, and competitive edge.