In various high-voltage, high-current application scenarios such as industrial motor drives, switch-mode power supplies, inverters, and welding equipment, Renesas IDT's RJK60S7DPP-E0#T2, with its robust performance and efficient switching characteristics, has been a key component for engineers worldwide. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported part faces challenges: unpredictable lead times, cost volatility due to exchange rates, and delayed technical support, which hinder production schedules and cost control for downstream companies. Against this backdrop, domestic substitution has evolved from an "option" to a "necessity," becoming a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBMB16R32S N-channel power MOSFET based on independent R&D. This product is precisely designed to replace the RJK60S7DPP-E0#T2, offering core advantages of parameter enhancements, technological parity, and full package compatibility. It serves as a direct drop-in replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for high-voltage electronic systems.
Comprehensive Parameter Surpassing, Enhanced Performance Margin, Adapting to Demanding Conditions.
Tailored as a domestic alternative to the RJK60S7DPP-E0#T2, the VBMB16R32S achieves significant improvements in key electrical parameters, providing stronger performance guarantees:
Firstly, the drain-source voltage remains at 600V, matching the original model, ensuring compatibility in standard high-voltage applications. Secondly, the continuous drain current is increased to 32A, surpassing the original model's 30A—a 6.7% boost in current-carrying capacity. This enables handling of higher power loads, enhancing system stability and scalability. Thirdly, the on-state resistance is drastically reduced to 85mΩ (@10V gate drive), compared to the RJK60S7DPP-E0#T2's 125mΩ—a 32% reduction. This lowers conduction losses, improves efficiency, and reduces heat generation in high-frequency switching applications. Additionally, the VBMB16R32S supports a ±30V gate-source voltage, offering robust gate ESD and noise immunity, and features a 3.5V gate threshold voltage for easy driving with mainstream ICs, eliminating the need for circuit adjustments.
Advanced SJ_Multi-EPI Technology, Reliability and Stability Upgraded.
The RJK60S7DPP-E0#T2 relies on proven technology for efficiency, while the VBMB16R32S employs advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. This enhances switching performance, reduces switching losses, and improves dv/dt tolerance. The device undergoes rigorous avalanche testing and high-voltage screening, ensuring excellent single-pulse avalanche energy handling for surge protection in high-voltage turn-off scenarios. Through optimized intrinsic capacitance design, it minimizes charge/discharge losses and elevates reliability. The VBMB16R32S operates across an ultra-wide temperature range of -55°C to 150°C, suited for harsh industrial environments, and has passed extended reliability tests such as 1000-hour high-temperature/high-humidity aging, with a failure rate below industry averages. This makes it ideal for critical applications like industrial control, motor drives, and power supplies.
Fully Compatible Package, Enabling "Seamless, Risk-Free, and Immediate" Replacement.
To address substitution concerns, the VBMB16R32S features a TO-220F package identical to the RJK60S7DPP-E0#T2 in pinout, spacing, dimensions, and heatsink structure. Engineers can directly replace the component without PCB layout changes or thermal redesign, achieving "plug-and-play" convenience. This compatibility slashes verification time—sample validation typically takes 1-2 days—and avoids costs from PCB revisions or recertification. It streamlines the supply chain, enabling quick adoption and market responsiveness.
Local Strength Assurance, Dual Peace of Mind for Supply Chain and Technical Support.
Unlike imported parts with unstable supply chains, VBsemi leverages China's integrated semiconductor industry, with modern production bases in Jiangsu and Guangdong ensuring full-process R&D and stable mass production. The VBMB16R32S has a standard lead time within 2 weeks, with emergency orders available for 72-hour delivery, mitigating risks from global volatility, tariffs, or geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation (substitution reports, datasheets, thermal guides, application circuits), customized selection advice, and circuit optimization. Technical issues receive 24-hour rapid response, resolving pain points of slow support and high communication costs with imported components.
From industrial motor drives and high-power inverters to welding machines and switch-mode power supplies, the VBMB16R32S, with its core advantages of "superior parameters, enhanced reliability, package compatibility, controllable supply, and attentive service," has become the preferred domestic alternative to the RJK60S7DPP-E0#T2. It has gained traction in leading companies across industries, earning market acclaim. Choosing the VBMB16R32S is not just a component swap—it's a strategic move to upgrade supply chain security, optimize costs, and boost product competitiveness, offering better performance, stable supply, and seamless support without R&D risks.