In various high-current application scenarios such as power management systems, motor drives, DC-DC converters, automotive electronics, and industrial automation, Nexperia's BUK9Y104-100B,115, with its advanced TrenchMOS technology, low on-resistance, and robust performance, has been a popular choice for engineers worldwide. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces growing challenges: extended lead times (often several months), procurement costs vulnerable to currency fluctuations, and delayed technical support. These issues severely impact production schedules and cost control for downstream companies. Against this backdrop, domestic substitution has evolved from an "option" to a "necessity," becoming a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitiveness.
Leveraging years of expertise in power semiconductor design, VBsemi introduces the VBED1101N N-channel power MOSFET based on independent R&D. This product directly targets the BUK9Y104-100B,115, offering core advantages of parameter enhancement, technological parity, and full package compatibility. It serves as a drop-in replacement without circuit modifications, providing a more stable, cost-effective, and locally supported solution for high-current electronic systems.
Comprehensive Parameter Surpassing, Delivering Higher Efficiency and Power Handling.
Designed as a domestic alternative to the BUK9Y104-100B,115, the VBED1101N achieves significant improvements in key electrical parameters, ensuring superior performance in demanding applications:
First, the continuous drain current is dramatically increased to 69A, compared to the original model's 14.8A—a 366% enhancement. This allows seamless adaptation to high-power circuits, whether upgrading existing equipment or improving system reliability at elevated current levels.
Second, the on-state resistance is reduced to just 11.6mΩ (@10V gate drive), substantially lower than the BUK9Y104-100B,115's 99mΩ (@10V, 5A). This reduction minimizes conduction losses, boosting overall efficiency and reducing heat generation. In high-frequency switching applications, it lowers thermal design pressure and energy costs.
Additionally, the VBED1101N maintains a drain-source voltage of 100V, matching the original, while supporting a ±20V gate-source voltage for enhanced gate ESD and noise immunity. The 1.4V gate threshold voltage balances drive convenience and switching reliability, compatible with mainstream driver ICs without circuit adjustments, simplifying substitution.
Advanced Trench Technology, Ensuring Reliability and Stability.
The BUK9Y104-100B,115 relies on TrenchMOS technology for low on-resistance and fast switching. The VBED1101N employs optimized Trench technology, building on these strengths while improving device robustness. It undergoes rigorous pre-shipment testing, including avalanche energy and high-voltage screening, to handle surge events effectively. Through refined capacitance design, it reduces switching losses and enhances dv/dt tolerance, ensuring stable operation in high-frequency or transient conditions. The device operates across a wide temperature range of -55°C to 150°C, suitable for harsh environments like automotive or industrial settings. With long-term reliability verification, including high-temperature/high-humidity aging tests, its failure rate is below industry averages, ideal for critical applications such as automotive systems, industrial controls, and renewable energy.
Fully Compatible Package, Enabling "Plug-and-Play" Replacement.
For downstream enterprises, replacement complexity is a major concern. The VBED1101N addresses this through its package design. It uses an LFPAK56 package, identical to the BUK9Y104-100B,115 in pinout, spacing, dimensions, and thermal structure. Engineers can replace it directly without PCB layout changes or thermal redesign, achieving "plug-and-play" convenience. This compatibility slashes verification time—sample validation typically completes within 1-2 days—and avoids costs from PCB revisions or模具 adjustments. It also preserves original product certifications and外观, accelerating supply chain integration and helping enterprises quickly adopt domestic alternatives.
Local Strength Assurance, Dual Peace of Mind for Supply and Support.
Compared to imported components with unstable supply chains, VBsemi leverages China's成熟的 semiconductor ecosystem, with modern production bases in Jiangsu and Guangdong. This ensures full-process R&D and stable mass production for the VBED1101N. Current lead times are compressed to under 2 weeks, with expedited orders enabling 72-hour delivery, mitigating risks from global logistics, tariffs, or geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation (including substitution reports, datasheets, thermal guides, and application circuits), tailored selection advice, and circuit optimization. Technical issues receive 24-hour responses, with on-site or remote assistance, eliminating slow support and high communication costs associated with imported parts.
From automotive power systems and industrial motor drives to DC-DC converters and battery management, the VBED1101N, with its core advantages of "higher current capacity, lower resistance, package compatibility, controllable supply, and responsive service," has become the preferred domestic alternative to the BUK9Y104-100B,115. It has gained adoption in leading companies across industries, earning market recognition. Choosing the VBED1101N is not just a component swap—it's a strategic move to secure supply chains, optimize costs, and boost product competitiveness, offering superior performance, stable supply, and seamless support without R&D risks.