In high-voltage, high-frequency application scenarios such as switch-mode power supplies, industrial inverters, LED lighting drivers, and motor control systems, ROHM's R6007JNXC7G N-channel power MOSFET has been a preferred choice for engineers worldwide due to its robust performance and reliability. However, in the post-pandemic era, this imported component faces increasing challenges: unstable lead times, procurement costs affected by exchange rate fluctuations, and slow technical support responses. These issues disrupt production schedules and cost control for downstream enterprises, making domestic substitution not just an option but a necessity for ensuring supply chain security and enhancing competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBMB16R07S N-channel power MOSFET as a direct alternative to the R6007JNXC7G. With parameter upgrades, technological parity, and full package compatibility, it enables seamless replacement without circuit modifications, offering a more stable, cost-effective, and locally supported solution for high-voltage electronic systems.
Comprehensive Parameter Enhancement, Delivering Superior Performance and Efficiency.
Designed as a domestic alternative to the R6007JNXC7G, the VBMB16R07S achieves significant improvements in key electrical parameters, providing enhanced reliability for demanding applications:
The drain-source voltage is maintained at 600V, matching the original model, ensuring compatibility in standard high-voltage environments. The continuous drain current is 7A, equal to the R6007JNXC7G, supporting robust current-carrying capacity for various power designs.
Critically, the on-state resistance is reduced to 650mΩ (@10V gate drive), compared to the original's 780mΩ (@15V, 3.5A). This 16.7% reduction in RDS(on) lowers conduction losses, improves overall efficiency, and reduces heat generation—particularly beneficial in high-frequency switching applications, easing thermal management demands.
Additionally, the VBMB16R07S supports a ±30V gate-source voltage, offering enhanced gate ESD protection and noise immunity to prevent unintended turn-on in complex electromagnetic environments. The 3.5V gate threshold voltage ensures compatibility with mainstream driver ICs, requiring no adjustments to drive circuits and simplifying substitution.
Advanced SJ_Multi-EPI Technology, Ensuring High Reliability and Stability.
The R6007JNXC7G relies on advanced MOSFET technology for low loss and high durability. The VBMB16R07S employs SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, optimizing switching characteristics and device reliability. It undergoes rigorous pre-shipment testing, including avalanche energy validation, to handle voltage surges during high-voltage turn-off, minimizing avalanche breakdown risks. Through optimized intrinsic capacitance design, switching losses are reduced, and dv/dt tolerance is enhanced, ensuring stable operation under high-frequency switching and transient conditions. With an operating temperature range of -55°C to 150°C, it adapts to harsh industrial and outdoor environments. Long-term reliability tests, such as high-temperature/high-humidity aging, confirm a failure rate below industry averages, making it ideal for critical applications like industrial control, medical equipment, and power backups.
Fully Compatible TO220F Package, Enabling "Plug-and-Play" Replacement.
To eliminate substitution hurdles, the VBMB16R07S features a TO220F package that is fully compatible with the R6007JNXC7G in pinout, dimensions, and heatsink structure. Engineers can replace the component directly without PCB layout changes or thermal system redesign, achieving "virtually cost-free and risk-free" integration. This compatibility slashes verification time—sample validation often completes within 1-2 days—and avoids costs from PCB revisions or mold adjustments. It also preserves original product certifications and外观 designs, accelerating supply chain cycles and helping enterprises swiftly upgrade imported components.
Localized Supply Chain and Technical Support, Dual Assurance for Seamless Transition.
Unlike imported components plagued by logistics delays and trade uncertainties, VBsemi leverages China's integrated semiconductor industry chain, with production bases in Jiangsu and Guangdong ensuring stable mass production of the VBMB16R07S. Standard lead times are within 2 weeks, with emergency orders supporting 72-hour fast delivery, mitigating risks from global supply chain disruptions and tariffs. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation (including substitution reports, datasheets, and application guides), customized selection advice, and circuit optimization. Technical teams respond within 24 hours to resolve on-site or remote issues, addressing slow support and high communication costs associated with imported parts.
From industrial power supplies and inverters to LED drivers and motor controls, the VBMB16R07S—with its superior parameters, stable performance, package compatibility, controllable supply, and attentive service—has become the preferred domestic alternative to the R6007JNXC7G. It is already adopted by leading companies across industries, gaining strong market recognition. Choosing the VBMB16R07S is not just a component swap; it is a strategic move to secure supply chains, optimize costs, and boost product competitiveness, offering better performance, reliable supply, and seamless support without R&D modification risks.