In numerous low-voltage, high-efficiency application scenarios such as power management modules, battery protection circuits, load switches, and portable devices, RENESAS IDT's UPA1919TE-T1-AT, with its P-channel configuration, low on-resistance, and compact SOT23-6 package, has been a popular choice for design engineers. However, in the current climate of global semiconductor supply chain volatility and extended lead times, reliance on this imported component presents growing challenges: uncertain availability, vulnerability to price fluctuations, and limited localized technical support. These factors increasingly impact product development cycles and cost stability for downstream manufacturers. Consequently, domestic substitution is no longer merely an alternative but a strategic imperative for ensuring supply chain resilience, optimizing costs, and strengthening market competitiveness.
Leveraging its extensive expertise in power semiconductor design, VBsemi introduces the VB8338 P-channel MOSFET, developed through independent R&D to serve as a precise, high-performance domestic replacement for the UPA1919TE-T1-AT. This product delivers critical advantages in parameter enhancement, technological equivalence, and full package compatibility. It enables a direct, drop-in replacement without circuit modifications, offering a more reliable, cost-effective, and locally supported solution for various low-voltage electronic systems.
Superior Parameter Performance, Providing Enhanced Design Margin and Efficiency.
Engineered as a direct alternative to the UPA1919TE-T1-AT, the VB8338 demonstrates significant improvements in key electrical specifications, ensuring robust operation in demanding low-voltage applications:
First, the drain-source voltage rating is increased to -30V, offering a 50% higher voltage tolerance compared to the original -20V. This expanded margin enhances system reliability in environments prone to voltage spikes or transients, reducing the risk of overvoltage failure.
Second, while the continuous drain current is rated at -4.8A, the VB8338 excels in its remarkably low on-resistance. With an RDS(on) of just 49mΩ at VGS = -10V, it substantially outperforms the original's 84mΩ at VGS = -2.5V. This reduction in conduction loss translates directly into higher system efficiency, lower power dissipation, and reduced thermal stress—particularly beneficial in space-constrained, battery-powered applications.
Furthermore, the VB8338 supports a gate-source voltage range of ±20V, ensuring strong gate robustness and immunity against noise and ESD events. Its gate threshold voltage of -1.7V balances ease of drive with reliable switching performance, ensuring seamless compatibility with mainstream driver circuits without requiring adjustments.
Advanced Trench Technology, Delivering High Reliability and Stability.
The UPA1919TE-T1-AT is valued for its low on-resistance and efficient switching characteristics. The VB8338 utilizes advanced Trench technology, which not only maintains these core benefits but also enhances device reliability and performance. The optimized cell structure ensures low gate charge and excellent switching speed, reducing dynamic losses in high-frequency applications. Each device undergoes rigorous production testing and quality screening, ensuring consistent performance and high avalanche energy capability. With an operational temperature range from -55°C to 150°C, the VB8338 is suited for harsh environments, including industrial and automotive-grade applications. It has passed stringent reliability tests, offering failure rates well below industry averages, making it ideal for critical systems where long-term stability is essential.
Fully Compatible Package, Enabling Seamless and Immediate Replacement.
A primary concern in component substitution is the engineering effort and cost involved in redesign. The VB8338 eliminates this hurdle through its package design. It is offered in the industry-standard SOT23-6 package, which is pin-for-pin and dimensionally identical to the UPA1919TE-T1-AT. Engineers can directly replace the original component on the existing PCB layout without any modifications to footprint, routing, or thermal management design. This plug-and-play compatibility drastically reduces verification time—typically requiring only 1-2 days for sample testing—and avoids additional costs related to PCB re-spins, mold changes, or mechanical re-certification. The result is a swift, low-risk substitution process that accelerates time-to-market.
Localized Supply Chain Assurance and Responsive Technical Support.
Unlike imported components susceptible to logistics delays, trade policies, and currency exchange risks, VBsemi's VB8338 benefits from a localized and secure supply chain. With modern manufacturing and R&D facilities in China, VBsemi guarantees stable mass production and short lead times—typically within 2-3 weeks, with expedited options available. This provides companies with greater supply predictability and insulation from global disruptions.
As a domestic supplier, VBsemi also offers dedicated, responsive technical support. Customers receive comprehensive documentation, including substitution verification reports, detailed datasheets, application notes, and thermal guidelines. The technical team provides personalized assistance, offering circuit optimization advice and rapid troubleshooting—often within 24 hours—ensuring a smooth and confident transition from the original component.
From power management modules and battery protection circuits to load switches, portable devices, and various low-voltage power applications, the VB8338 stands out as the optimal domestic replacement for the RENESAS IDT UPA1919TE-T1-AT. Its advantages—enhanced electrical parameters, advanced Trench technology, full package compatibility, secure supply, and localized support—have already earned it adoption by leading manufacturers across multiple sectors. Choosing the VB8338 is more than a component swap; it is a strategic move toward greater supply chain security, improved product performance, and sustainable cost efficiency—all achieved without design risk or compromise.